No | Part number | Description ( Function ) | Manufacturers | |
1 | 1SS139 | DIODE
|
ROHM Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 1SS139 |
Part No | Description ( Function) | Manufacturers | |
1SS104 | SILICON PLANAR TYPE DIODE |
Toshiba Semiconductor |
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1SS106 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS106 Catho |
Hitachi Semiconductor |
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1SS106 | SILICON SCHOTTKY BARRIER DIODE 1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forwar |
SEMTECH |
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1SS106 | Silicon Schottky Barrier Diode 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0125-0200Z (Previous: ADE-208-153A) Rev.2.00 Oct.23.2003 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal.. Ordering Info |
Renesas |
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1SS106 | SMALL SIGNAL SCHOTTKY DIODES R SEMICONDUCTOR 1SS106 SMALL SIGNAL SCHOTTKY DIODES FEATURES Detection effciency is very good Small temperature coefficient High reliability with glass seal For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits small current rectifier High |
JINAN JINGHENG ELECTRONICS |
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Part Number | Function | Manufacturers | |
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Vishay |
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