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Datasheet 0809LD30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 0809LD30 | 30 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE
0809LD30
30 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to |
 GHZ Technology |
 |
| 1 | 0809LD30P | 30 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE
0809LD30P
30 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization |
GHZ Technology |
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