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Datasheet BZX84C12W Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZX84C12W | Zener Diode, Rectifier JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate DLRGHV
BZX84C2V4W-BZX84C39W ZENER DIODE
FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power Dissipation
SOT-323
Maximum Ratings(Ta=25� |  JCET | diode |
| 2 | BZX84C12W | Surface Mount Zener Voltage Regulator Diodes Elektronische Bauelemente
BZX84CxxxW Series
200 mW SOT-323 Series Surface Mount Zener Voltage Regulator Diodes
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Planar die construction 200mW power dissipation Zener voltages from 2.4V - 39V Ultra-small surface mou |  SeCoS | diode |
| 3 | BZX84C12W | 200mW, Zener Diode ( SMD Type) Features
• Planar Die Construction • 200mW Power Dissipation • Zener Voltages from 2.4V – 39V • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 4) • "Green" Device (Notes 1 and 2)
BZX84C2V4W - BZX84C39W
200mW SURFACE MOUNT ZENER DIODE
Mechanical Data
• Case: SOT-3 |  Diodes | diode |
| 4 | BZX84C12W | Zener Diode BZX84C SERIES
Zener Diode
SOT-323
Features
Planar Die Construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Ultra-Small Surface Mount Package Power dissipation
Dimensions in inches and (millimeters)
Maximum Ratings @TA=25℃ unless otherwise specified
Characteristic
Sy |  LGE | diode |
| 5 | BZX84C12W | Zener Diode, Rectifier WEITRON
Surface Mount Zener Diode
Pb
Features: * Planar Die Construction * 200mW Power Dissipation on FR-4 PCB * General purpose, Medium Current * Ideally Suited for Automated Assembly
SOT-323 Outline Demensions
A
TOP VIE W
BC
D EG
H
K
L J
M
BZX84C2V4W Series
ZENER DIODE 200m WATTS
3 1
2
31
|  WEITRON | diode |
| 6 | BZX84C12W | 200mW, Zener Diode ( SMD Type) Features
• Planar Die Construction • 200mW Power Dissipation • Zener Voltages from 2.4V – 39V • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 4) • "Green" Device (Notes 1 and 2)
BZX84C2V4W - BZX84C39W
200mW SURFACE MOUNT ZENER DIODE
Mechanical Data
• Case: SOT-3 | Diodes | diode |
| 7 | BZX84C12W | 200mW, Zener Diode ( SMD Type) |  Diodes Incorporated | diode |
| 8 | BZX84C12W | Silicon 200 mWatt Zener Diodes MCC
Features
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omponents 21201 Itasca Street Chatsworth !"# $
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BZX84C2V4W THRU BZX84C39W
Silicon 200 mWatt Zener Diodes
Planar Die construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automa |  Micro Commercial Components | diode |
| 9 | BZX84C12W | SURFACE MOUNT SILICON ZENER DIODES BZX84C2V4W thru BZX84C39W
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE FEATURES
• Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V - 39V • Ideally Suited for Automated Assembly Processes
2.4 - 39 Volts
POWER
200 mWatts
PACKAGE
SOT-323
MECHANICAL DATA
Case: SOT |  Pan Jit International Inc. | diode |
BZX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZX10 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju  COS diode | | |
| 2 | BZX10 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 3 | BZX11 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 4 | BZX11 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 5 | BZX12 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 6 | BZX12 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 7 | BZX13 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | | |
| 8 | BZX13 | Zener Diode w
w
w Low reverse current level
Very high stability Low noise
0.5Max
Available with tighter tolerances
CATHODE MARK
Applications
Voltage stabilization
T j =25 C
Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value
TStg
Marking
Example:
COS
6V8
w
w COS diode | | |
| 9 | BZX15 | Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE
Unit in: mm
2.0Max 0.5Max 26.0Min CATHODE MARK
Features:
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
T j =25C
Parameter Power dissipation Ju COS diode | |
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