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What is HAF2021S?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "Silicon N-Channel MOSFET".


HAF2021S Datasheet PDF - Renesas

Part Number HAF2021S
Description Silicon N-Channel MOSFET
Manufacturers Renesas 
Logo Renesas Logo 


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No Preview Available ! HAF2021S datasheet, circuit

HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series
Power Switching
REJ03G0179-0200Z
(Previous ADE-208-1459A(Z))
Rev.2.00
Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in
over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation (6 V Gate drive)
High endurance capability against to the short circuit
Built–in the over temperature shut–down circuit
Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature
Sensing Circuit
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Latch
Circuit
Gate
Shut-down
Circuit
S
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8

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HAF2021S equivalent
HAF2021(L), HAF2021(S)
Static Drain to Source State Resistance
vs. Temperature
25
Pulse Test
20
25 A, 10 A
15
ID = 50 A
VGS = 6 V
10
ID = 50 A
25 A, 10 A
5 VGS = 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
12
5 10 20 50 100
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Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
50
Pulse Test
40
30
20
VGS = 5 V
10
0, -5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
100
50
VDS = 10 V
Pulse Test
20 Tc = -25°C
10
5
2 25°C
1
75°C
0.5
0.2
0.1
0.1
0.5 1
5 10
50 100
Drain Current ID (A)
1000
500
200
Switching Characteristics
VGS = 10 V, VDD = 30 V
PW = 300 µs, duty < 1 %
100 tr
50
td(on)
20
10
td(off)
5
2
1
0.5 1
tf
5 10
50 100
Drain Current ID (A)
500
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Rev.2.00, Mar.05.2004, page 5 of 8


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HAF2021S electronic component.


Information Total 9 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
HAF2021The function is Silicon N Channel MOSFET Series Power Switching. Renesas TechnologyRenesas Technology
HAF2021LThe function is Silicon N-Channel MOSFET. RenesasRenesas
HAF2021SThe function is Silicon N-Channel MOSFET. RenesasRenesas

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