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Número de pieza | RU55L18L | |
Descripción | P-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU55L18L (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! RU55L18L
P-Channel Advanced Power MOSFET
MOSFET
Features
• -60V/-16A,
RDS (ON) =100mΩ(tpy.)@VGS=-10V
RDS (ON) =125mΩ(tpy.)@VGS=-4.5V
• Super High Dense Cell Design
• ESD protected
• Reliable and Rugged
• 100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management
• Load Switch
• DC/DC Converter
Absolute Maximum Ratings
Pin Description
TO252
P-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Rating
-60
±20
175
-55 to 175
-16
①
-64
-16
-11
50
25
3
72
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2012
www.ruichips.com
1 page Typical Characteristics
Drain-Source On Resistance
RU55L18L
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
-VSD - Source-Drain Voltage (V)
Gate Charge
-VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet RU55L18L.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU55L18L | P-Channel Advanced Power MOSFET | Ruichips |
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