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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
BAV100, BAV101
BAV102, BAV103
SOD - 80C
Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,
Digital Voltmeters and Video Output Stages in Colour Television
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current t=1 s
t=1 µs
Power Dissipation up to Ta=25ºC
Storage Temperature
Junction Temperature
THERMAL RESISTANCE
Junction to Ambient in free air
SYMBOL
VR
VRRM
IF (AV)
IF
IFRM
IFSM
IFSM
Ptot
Tstg
Tj
BAV100
50
60
Rth (j-a)
BAV101
100
120
BAV102
150
200
250
250
625
1
5
400
- 65 to +175
175
BAV103
200
250
0.375
UNIT
V
V
mA
mA
mA
A
A
mW
ºC
ºC
K/mW
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=100mA
IF=200mA
Reverse Breakdown Voltage
*VBR
IR=100µA
BAV100
BAV101
BAV102
BAV103
Reverse Current
IR VR= VR max
VR= VR max, Tj=150ºC
Differential Resistance
rdiff IF=10mA
MIN MAX UNIT
1.00 V
1.25 V
60
120
200
250
100
100
Typ 5
V
V
V
V
nA
µA
Ω
DYNAMIC CHARACTERISTICS
Diode Capacitance
Reverse Recovery Time
Cd VR=0V, f=1MHz
5 pF
trr IF=30mA, to IR=30mA
RL=100 Ω
50 ns
Measured @ IR=3mA
.
* @ Zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited @ 275V
BAV100_103Rev141002E
Continental Device India Limited
Data Sheet
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