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PDF TSM40N03PQ33 Data sheet ( Hoja de datos )
| Número de pieza | TSM40N03PQ33 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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PDFN33
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
TSM40N03PQ33
30V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
4.6 @ VGS =10V
30
5.9 @ VGS =4.5V
ID (A)
19
16
Features
● Advanced Trench Technology
● Low On-Resistance
● Low gate charge typical @ 12nC (Typ.)
● Low Crss typical @ 140pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM40N03PQ33 RGG PDFN33 5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current
TC=70°C
TA=25°C
ID
TA=70°C
Drain Current-Pulsed Note 1
IDM
Avalanche Current, L=0.5mH
IAS, IAR
Avalanche Energy, L=0.5mH
EAS, EAR
TC=25°C
Maximum Power Dissipation
TC=70°C
TA=25°C
PD
TA=70°C
Storage Temperature Range
TSTG
Operating Junction Temperature Range
TJ
* Limited by maximum junction temperature
Limit
30
±20
40
40
25
20
100
38
72
52
33
3.8
2.4
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
Limit
2.4
33
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
oC/W
oC/W
1/4 Version: A12
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM40N03PQ33.PDF ] | |
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