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PDF BU806 Data sheet ( Hoja de datos )
| Número de pieza | BU806 | |
| Descripción | MEDIUM Voltage & Fast Switching Darlington Transistor | |
| Fabricantes | TGS | |
| Logotipo |  |
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TIGER ELECTRONIC CO.,LTD
MEDIUM Voltage & Fast Switching DarlingtonTransistor
Product specification
BU806
DESCRIPTION
The devices are silicon Epitaxial Planar NPN power transistors in Darlington
configuration with integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of 110 oCRT video displays.
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
l Value Unit
Collector-Base Voltage
VCBO 400 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
200 V
6V
8.0 A
2.0 A
60 W
150 oC
-55~150 oC
TO-220
Electrical Characteristics ( Ta = 25℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Forward Voltage
Storage Time
Symbol Test Conditions
ICES VCE=400V, VBEO=0
IEBO VEB=6V, IC=0
VCEO IC=100mA, IB=0
hFE(1) VCE=5V, IC=5.0A
VCE(sat) IC=5.0A,IB=50mA
VBE(sat) IC=5.0A,IB=50mA
VF IF=4.0A
TS IC=5A, IB=0.5A
Min.
—
—
200
200
—
—
—
—
Typ.
—
—
—
—
—
—
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0.55
Max. Unit
100 uA
3.5 mA
—V
—
1.5 V
2.4 V
2V
— us
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BU806.PDF ] | |
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