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Datasheet 1N4448W Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N4448WSmall Signal Fast Switching Diode

www.vishay.com 1N4448W Vishay Semiconductors Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode • Fast switc
Vishay
Vishay
diode
21N4448WSurface Mount Fast Switching Diode

Elektronische Bauelemente 1N4448W Surface Mount Fast Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION z Fast switching speed z Ultra-Small surface mount package z For general purpose switching applications z High conductance z Also available in
SeCoS
SeCoS
diode
31N4448WFAST SWITCHING DIODE

1N4448W FAST SWITCHING DIODE 1.80(.071) 1.40(.055) SOD-123 1.65(.065) 1.55(.061) 3.86(0.152) 3.56(0.145) 2.84(0.112) 2.54(0.100) 3.9(0.154) 3.7(0.146) 2.7(0.106) 2.6(0.102) FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switchin
MDD
MDD
diode
41N4448WSILICON EPITAXIAL PLANAR DIODE

1N4448W SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Forward Continuous Current Non-Repetitive Peak Forward Surge Current (at t = 1 µs) Power Dissipation Junction Temperature
SEMTECH
SEMTECH
diode
51N4448WDIODE

RoHS 1N4448W DFeatures T· Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion .,L· For General Purpose Switching Applications O· High Conductance 1.6 SOD-123 2.70 3.70 1.05 0.55 IC CMaximum Ratings @ TA = 25°C unless otherwise specified Characteristic Non-
WEJ
WEJ
diode


1N4 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
11N40Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
21N40N-CHANNEL POWER MOSFET

1N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 1A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta
Unisonic Technologies
Unisonic Technologies
mosfet
31N400010 WATT ZENER DIODES

1N2970 thru 1N3015B and 1N3993 thru 1N4000A 10 WATT ZENER DIODES SCOTTSDALE DIVISION DESCRIPTION These high power 10 W Zener diodes represented by the JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage regulation in a selection over a 3.9 V to 200 V broad range of v
Microsemi Corporation
Microsemi Corporation
diode
41N4000Zener Diode, Rectifier

S O LID STAT E INC. 1N3993 – 1N4000 Your TOTAL solutions source! 10 WATTS ZENER DIODES DO4 ZENER DIODES Low-voltage, alloy-junction zener diodes in hermetically sealed package with cathode connected to case. Polarity: Cathode-to-case (reverse polarity units are available and designed by an "
SOLID STATE
SOLID STATE
diode
51N400010W Zener Diodes

http://www.Datasheet4U.com
Motorola Semiconductors
Motorola Semiconductors
diode
61N4000Diode Zener Single 7.5V 20% 10W 2-Pin DO-4

New Jersey Semiconductor
New Jersey Semiconductor
diode
71N4000-1Diode Zener Single 7.5V 10% 10W 2-Pin DO-4

New Jersey Semiconductor
New Jersey Semiconductor
diode



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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