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What is SGC-6489Z?

This electronic component, produced by the manufacturer "RF Micro Devices", performs the same function as "high performance SiGe HBT MMIC amplifier".


SGC-6489Z Datasheet PDF - RF Micro Devices

Part Number SGC-6489Z
Description high performance SiGe HBT MMIC amplifier
Manufacturers RF Micro Devices 
Logo RF Micro Devices Logo 


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SGC-6489Z
50MHz to
3500MHz Sili-
con Germa-
nium Active
Bias Gain
Block
NOT FOR NEW DESIGNS
SGC-6489Z
50MHz to 3500MHz SILICON GERMANIUM
ACTIVE BIAS GAIN BLOCK
Package: SOT-89
Product Description
RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with an active bias network. The active bias
network provides stable current over temperature and process Beta varia-
tions. Designed to run directly from a 5V supply, the SGC-6489Z does not
require a dropping resistor as compared to traditional Darlington amplifi-
ers. The SGC-6489Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss
30.0 VD = 5V, ID = 85mA
20.0
S21
10.0
0.0
Bias Tee Data, ZS = ZL = 50 , TL
-10.0
S22
-20.0
-30.0
S11
-40.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Features
Single Supply Operation: 5V
at ID = 85mA
No Dropping Resistor
Required
Patented Self Bias Circuitry
Gain = 19.5dBm at 1950MHz
P1dB = 19.2dBm at
1950MHz
IP3 = 32.8dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
20.7
22.2
23.7
dB 850MHz
18.0
19.5
21.0 dB 1950MHz
18.3
dB 2400MHz
Output Power at 1dB Compression
20.6
dBm
850MHz
17.7 19.2
dBm
1950MHz
18.4
dBm
2400MHz
Output Third Order Intercept Point
34.1
dBm
850MHz
30.8
32.8
dBm
1950MHz
31.4
dBm
2400MHz
Input Return Loss
14 18
dB 1950MHz
Output Return Loss
8 11
dB 1950MHz
Noise Figure
2.4 3.4 dB 1930MHz
Device Operating Voltage
5V
Device Operating Current
70 82 94 mA
Thermal Resistance
70
°C/W
junction to lead
Test Conditions: VD = 5.0V, ID = 82mA, TL = 25°C, OIP3 Tone Spacing = 1MHz, Bias Tee Data, ZS = ZL = 50, POUT per tone = 0dBm
DS120409
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SGC-6489Z equivalent
SGC-6489Z
Application Schematic
Vs
.1uF
1000pF
C3
RF IN
C1
4
1
SGC-6489Z
3
2
L1
RF OUT
C2
Reference
Designator
C1
C2
C3
L1
500 - 2100 MHz
43pF
43pF
100pF
48nH 0805HQ CC
Evaluation Board
Mounting Instructions
1. Solder the copper pad on the backside of the
device package to the ground plane.
2. Use a large ground pad area with many plated
through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
DS120409
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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Featured Datasheets

Part NumberDescriptionMFRS
SGC-6489ZThe function is high performance SiGe HBT MMIC amplifier. RF Micro DevicesRF Micro Devices
SGC-6489ZThe function is high performance SiGe HBT MMIC amplifier. RF Micro DevicesRF Micro Devices

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