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PDF BSP52T1G Data sheet ( Hoja de datos )
| Número de pieza | BSP52T1G | |
| Descripción | NPN Small-Signal Darlington Transistor | |
| Fabricantes | ON Semiconductor | |
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BSP52T1G, BSP52T3G
NPN Small-Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
• The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
• PNP Complement is BSP62T1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
80 V
90 V
5.0 V
1.0 A
0.8 W
6.4 mW/°C
Total Power Dissipation (Note 2)
@ TA = 25°C
Derate above 25°C
PD
1.25 W
10 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg −65 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance (Note 1)
Junction-to-Ambient
RqJA
156 °C/W
Thermal Resistance (Note 2)
Junction-to-Ambient
RqJA
100 °C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260 °C
10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad.
http://onsemi.com
MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
COLLECTOR 2,4
BASE
1
EMITTER 3
4 MARKING DIAGRAM
123
SOT−223
CASE 318E
STYLE 1
AYW
AS3G
G
A = Assembly Location
Y = Year
W = Work Week
AS3 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BSP52T1G
SOT−223 1000 / Tape & Reel
(Pb−Free)
BSP52T3G
SOT−223 4000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
Publication Order Number:
BSP52T1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet BSP52T1G.PDF ] | |
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