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PDF uPC8179TK Data sheet ( Hoja de datos )
| Número de pieza | uPC8179TK | |
| Descripción | SILICON MMIC LOW CURRENT AMPLIFIER | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8179TK
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC
can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
wide band matched IC. µPC8179TK adopts 6-pin lead-less minimold package using same chip as the conventional
µPC8179TB in 6-pin super minimold.
TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50%.
This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
FEATURES
• Low current consumption
: ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage
: VCC = 2.4 to 3.3 V
• Excellent isolation
: ISL = 43.0 dB TYP. @ f = 1.0 GHz
ISL = 42.0 dB TYP. @ f = 1.9 GHz
ISL = 42.0 dB TYP. @ f = 2.4 GHz
• Power gain
: GP = 13.5 dB TYP. @ f = 1.0 GHz
GP = 15.5 dB TYP. @ f = 1.9 GHz
GP = 16.0 dB TYP. @ f = 2.4 GHz
• Gain 1 dB compression output power : PO (1 dB) = +2.0 dBm TYP. @ f = 1.0 GHz
PO (1 dB) = +0.5 dBm TYP. @ f = 1.9 GHz
PO (1 dB) = +0.5 dBm TYP. @ f = 2.4 GHz
• Operating frequency
: 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting
: 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm)
• Light weight
: 3 mg (Standard value)
APPLICAION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10059EJ02V0DS (2nd edition)
Date Published April 2005 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2005
1 page  
µPC8179TK
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Circuit Current
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
Symbol
Test Conditions
VCC TA = +25°C, Pin 4, Pin 6
ICC TA = +25°C
PD TA = +85°C
TA
Tstg
Pin TA = +25°C
Note
Ratings
3.6
15
232
−40 to +85
−55 to +150
+5
Unit
V
mA
mW
°C
°C
dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
VCC
MIN.
2.4
TA −40
TYP.
3.0
MAX.
3.3
+25 +85
Unit Remarks
V The same voltage should be applied to
pin 4 and pin 6.
°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 Ω, at LC matched frequency)
Parameter
Circuit Current
Power Gain
Isolation
Gain 1 dB Compression Output
Power
Noise Figure
Input Return Loss
Symbol
Test Conditions
ICC No signal
GP f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
ISL f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
PO (1 dB) f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
NF f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
RLin f = 1.0 GHz, Pin = −30 dBm
f = 1.9 GHz, Pin = −30 dBm
f = 2.4 GHz, Pin = −30 dBm
MIN.
2.9
11.0
13.0
14.0
39.0
37.0
37.0
−0.5
−2.0
−3.0
−
−
−
4.0
4.0
6.0
TYP.
4.0
13.5
15.5
16.0
43.0
42.0
42.0
+2.0
+0.5
+0.5
5.0
5.0
5.0
7.0
7.0
9.0
MAX.
5.4
15.5
17.5
18.5
−
−
−
−
−
−
6.5
6.5
6.5
−
−
−
Unit
mA
dB
dB
dBm
dB
dB
Data Sheet PU10059EJ02V0DS
5
5 Page 
f = 1.0 GHz MATCHING
S11-FREQUENCY
MARKER 1
1.0 GHz
1: 76.586 Ω
–65.898 Ω
2.4152 pF
1
VCC = 3.0 V
ICC = 4.23 mA
Pin = –30 dBm
START 100.000 000 MHz STOP 3 100.000 000 MHz
µPC8179TK
S22-FREQUENCY
MARKER 1
1.0 GHz
1: 64.07 Ω
2.8164 Ω
448.24 pH
1
START 100.000 000 MHz
VCC = 3.0 V
ICC = 4.23 mA
Pin = –30 dBm
STOP 3 100.000 000 MHz
S11-FREQUENCY
S11 log
0
–2
–4
–6
–8
MAG 2 dB/ REF 0 dB 1: –7.7054 dB
Pin = –30 dBm,
MARKER 1 f = 1.0 GHz
1 VCC = 2.7 V 2.4 V
–10
–12 3.0 V 3.3 V
–14
–16
–18
–20
START 100.000 000 MHz STOP 3 100.000 000 MHz
S12-FREQUENCY
S12 log
–20
–25
–30
–35
–40
–45
MAG 5 dB/ REF –20 dB 1: –43.627 dB
Pin = –30 dBm,
MARKER 1 f = 1.0 GHz
VCC = 2.4 V
2.7 V
1 3.0 V
3.3 V
–50
–55
–60
–65
–70
START 100.000 000 MHz
STOP 3 100.000 000 MHz
S21-FREQUENCY
S21 log
20
18
16
14
MAG 2 dB/ REF 0 dB 1: 13.368 dB
Pin = –30 dBm,
MARKER 1 f = 1.0 GHz
1
12
10 VCC = 3.3 V
3.0 V
8
6
4
2.7 V
2.4 V
2
0
START 100.000 000 MHz STOP 3 100.000 000 MHz
Remark The graphs indicate nominal characteristics.
S22-FREQUENCY
S22 log MAG 2 dB/ REF 0 dB 1: –15.922 dB
0
–2
–4
VCC = 2.4 V
–6 2.7 V
–8 3.0 V
3.3 V
–10
–12
–14
1
–16
–18
Pin = –30 dBm,
MARKER 1 f = 1.0 GHz
–20
START 100.000 000 MHz STOP 3 100.000 000 MHz
Data Sheet PU10059EJ02V0DS
11
11 Page | ||
| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet uPC8179TK.PDF ] | |
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