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PDF STP12N50M2 Data sheet ( Hoja de datos )
| Número de pieza | STP12N50M2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP12N50M2
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg
Power MOSFET in a TO-220 package
Datasheet - preliminary data
7$%
72
Features
Order code
STP12N50M2
VDS
500 V
RDS(on) max ID
0.38 Ω 10 A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Order code
STP12N50M2
.
Table 1. Device summary
Marking
Package
12N50M2
TO-220
Packaging
Tube
June 2014
DocID026516 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
1 page  
STP12N50M2
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 13.5 -
- 10.5 -
-8-
- 34.5 -
ns
ns
ns
ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS = 0, ISD = 10 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 10 A, di/dt = 100 A/μs
VDD = 60 V, Tj=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
- 10 A
- 40 A
- 1.6 V
- 276
ns
- 2.4
μC
- 17.5
A
- 376
ns
- 3.4
μC
- 18.3
A
DocID026516 Rev 1
5/13
13
5 Page 
STP12N50M2
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
Table 9. TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID026516 Rev 1
11/13
13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STP12N50M2.PDF ] | |
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