(PDF) KF2N60L Datasheet - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Número de pieza	KF2N60L
Descripción	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES VDSS= 600V, ID= 0.70A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 Ta=25 PD Maximum Junction Temperature Tj Storage Temperature Range Thermal Characteristics Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to- Ambient RthJC RthJA RATING 600 30 0.70 0.44 4.0 60 1.5 4.5 5.4 0.043 1 150 -55 150 23 125 UNIT V V A mJ mJ V/ns W W/ W /W /W KF2N60L N CHANNEL MOS FIELD EFFECT TRANSISTOR +_ +_ +_ PIN CONNECTION 2013. 1. 14 Revision No : 0 1/6 1 page KF2N60L 2013. 1. 14 Revision No : 0 5/7 5 Page

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PDF KF2N60L Data sheet ( Hoja de datos )