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What is STB7ANM60N?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STB7ANM60N Datasheet PDF - STMicroelectronics

Part Number STB7ANM60N
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB7ANM60N,
STD7ANM60N
Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II
2
Power MOSFETs in D PAK and DPAK packages
Datasheet - production data
Features
TAB
2
3
1
D 2 PAK
TAB
3
1
DPAK
Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N
STD7ANM60N
650 V
0.9 Ω
5A
Designed for automotive applications and
AEC-Q101 qualified
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
' Ć7$%
Applications
Switching applications
Description
* 
6 
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order codes
STB7ANM60N
STD7ANM60N
Table 1. Device summary
Marking
Packages
7ANM60N
2
D PAK
DPAK
Packaging
Tape and reel
December 2013
This is information on a product in full production.
DocID023350 Rev 2
1/20
www.st.com

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STB7ANM60N equivalent
STB7ANM60N, STD7ANM60N
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 5 A, VGS = 0
- 5A
- 20 A
- 1.3 V
trr Reverse recovery time
- 213
Qrr Reverse recovery charge
ISD = 5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 20)
-
1.5
IRRM Reverse recovery current
- 14
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
- 265
- 1.8
- 14
ns
μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID023350 Rev 2
5/20
20


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
STB7ANM60NThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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