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PDF 2SD2118 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2118 | |
| Descripción | NPN Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SD2118 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2SD2118(NPN)
TO-251/TO-252-2L Transistor
TO-251
1.BASE
2.COLLECTOR
Features
1 23
3.EMITTER
Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
Excellent DC current gain characteristics.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
20
6
5
1
150
-55-150
Units
V
V
V
A
W
℃
℃
TO-252-2L
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Range
V(BR)CBO IC=50µA,IE=0
V(BR)CEO IC =1mA,IB=0
V(BR)EBO IE=50µA,IC=0
ICBO
VCB=40V,IE=0
IEBO
VEB=5V,IC=0
hFE VCE=2V,IC=0.5A
VCE(sat) IC=4A,IB=100mA
fT VCE=6V,IC=50mA,f=100MHz
Cob VCB=20V,IE=0,f=1MHz
Q
120-270
50 V
20 V
6V
0.5 µA
0.5 µA
120 390
1V
150 MHz
30 pF
R
180-390
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD2118.PDF ] | |
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