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Número de pieza | STD16N60M2 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STD16N60M2
N-channel 600 V, 0.280 Ω typ., 12 A MDmesh™ M2
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD16N60M2
VDS
600 V
RDS(on) max.
0.320 Ω
ID
12 A
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
Order code
STD16N60M2
S(3)
AM15572v1_tab
Table 1: Device summary
Marking
Package
16N60M2
DPAK
Packing
Tape and reel
March 2015
DocID027191 Rev 2
This is information on a product in full production.
1/16
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1 page STD16N60M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 12 A
ISD = 12 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
trr Reverse recovery time
ISD = 12 A,
Qrr
Reverse recovery charge
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test
IRRM
Reverse recovery current circuit for inductive load
switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
-
-
Typ.
316
3.25
Max. Unit
12 A
48 A
1.6 V
ns
µC
- 20.5
A
- 454
- 4.8
ns
µC
- 21
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027191 Rev 2
5/16
5 Page STD16N60M2
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
Package mechanical data
Table 9: DPAK (TO-252) type A2 mechanical data
mm
Min.
Typ.
Max.
2.20 2.40
0.90 1.10
0.03 0.23
0.64 0.90
5.20 5.40
0.45 0.60
0.48
6.00
4.95 5.10
0.60
6.20
5.25
6.40
5.10 5.20
6.60
5.30
2.16 2.28
4.40
2.40
4.60
9.35 10.10
1.00 1.50
2.60 2.80
0.65 0.80
0.60
3.00
0.95
1.00
0.20
0°
8°
DocID027191 Rev 2
11/16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet STD16N60M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD16N60M2 | N-channel Power MOSFET | STMicroelectronics |
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