IRGP4069D-EPbF Datasheet PDF - International Rectifier
Part Number | IRGP4069D-EPbF | |
Description | INSULATED GATE BIPOLAR TRANSISTOR | |
Manufacturers | International Rectifier | |
Logo | ||
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IRGP4069DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP4069D-EPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 35A
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
CC
GC E
TO-247AC
IRGP4069DPbF
GC E
TO-247AD
IRGP4069D-EPbF
G
Gate
C
Collector
E
Emitter
Max.
600
76
50
35
105
140
76
50
140
±20
±30
268
134
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.56
1.0
–––
40
Units
°C/W
www.irf.com
10/2/09
|
|
IRGP4069DPbF/IRGP4069D-EPbF
4000
1000
3500
3000
2500
2000
EON
1500
1000
EOFF
500
0
0 10 20 30 40 50 60 70
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
3000
tdOFF
100
tF
tdON
10
0
tR
10 20 30 40 50 60 70
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
2500
2000
1500
1000
EON
EOFF
tdOFF
100
tF
tdON
tR
500
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
35
10
0
10 20 30 40 50
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
26
30 RG = 10Ω
25 RG = 22Ω
20 RG = 47Ω
15
RG = 100Ω
10
10 20 30 40 50 60
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
70
24
22
20
18
16
14
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
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