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PDF IRGP35B60PDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGP35B60PDPbF | |
| Descripción | SMPS IGBT | |
| Fabricantes | International Rectifier | |
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SMPS IGBT
PD - 95329
IRGP35B60PDPbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies
• Lead-Free
Features
• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84mΩ
ID (FET equivalent) = 35A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
60
34
120
120
40
15
60
±20
308
123
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0 (0.21)
Max.
0.41
1.7
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
6/2/04
1 page  
IRGP35B60PDPbF
800
700
600
EON
500
400
EOFF
300
200
100
0
0
10 20 30 40 50
RG (Ω)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
30
25
1000
tdOFF
100
tdON
tF
10
tR
1
0 10 20 30 40 50
RG (Ω)
Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
10000
Cies
20 1000
15 Coes
10 100
Cres
5
0
0 100 200 300 400 500 600 700
VCE (V)
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
16
14
12 400V
10
8
6
4
2
0
0 50 100 150 200
Q G, Total Gate Charge (nC)
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 22A
www.irf.com
10
0
20 40 60 80 100
VCE (V)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1.4
1.2
1.0
0.8
-50 0 50 100 150 200
TJ (°C)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 22A, VGE= 15V
5
5 Page 
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGP35B60PDPbF.PDF ] | |
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