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PDF BGA7L1N6 Data sheet ( Hoja de datos )
| Número de pieza | BGA7L1N6 | |
| Descripción | Single Band LTE LNA | |
| Fabricantes | Infineon | |
| Logotipo |  |
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BGA7L1N6
Single Band LTE LNA
Low Noise Amplifier for LTE Band 8
Application (925 - 960 MHz) using
0201 Components
Application Note AN364
Revision: Rev. 1.0
2014-12-18
RF and Protection Devices
1 page  
1 Introduction
BGA7L1N6
Single Band LTE LNA B8
Introduction
1.1 About 3G and 4G Applications
The mobile technologies for smartphones have seen tremendous growth in recent years. The
data rate required from mobile devices has increased significantly over the evolution modern
mobile technologies starting from the first 3G/3.5G technologies (UMTS & WCDMA, HSPA &
HSPA+) to the recently 4G LTE-Advanced (LTE-A). LTE-A can support data rates of up to 1
Gbps.
Advanced technologies such as diversity multiple input multiple output (MIMO) and carrier
aggregation (CA) are adopted to achieve such higher data rate requirements. MIMO
technology, commonly referred as the diversity path in smartphones, has attracted attention
for the significant increasement in data throughput and link range without additional
bandwidth or increased transmit power. The technology supports scalable channel
bandwidth, between 1.4 and 20 MHz. The ability of 4G LTE to support bandwidths up to 20
MHz and to have more spectral efficiency by using high order modulation methods like QAM-
64 is of particular importance as the demand for higher wireless data speeds continues to
grow fast. Carrier aggregation used in LTE-Advanced combines up to 5 carriers and widens
bandwidths up to 100 MHz to increase the user rates, across FDD and TDD.
Countries all over the world have released various frequencies bands for the 4G
applications.Table 1 shows the band assignment for the LTE bands worldwide.
Table 1
LTE Band Assignment
Band No.
Uplink Frequency
Range (MHz)
1 1920 - 1980
2 1850 - 1910
3 1710 - 1785
4 1710 - 1755
5 824 - 849
6 830 - 840
7 2500 - 2570
8 880 - 915
9 1749.9 - 1784.9
10 1710 - 1770
Downlink Frequency
Range (MHz)
2110 - 2170
1930 - 1990
1805 - 1880
2110 - 2155
869 - 894
875 - 885
2620 - 2690
925 - 960
1844.9 - 1879.9
2110 - 2170
Duplex
Mode
FDD
FDD
FDD
FDD
FDD
FDD
FDD
FDD
FDD
FDD
Note
EMEA, Japan
US PCS
GSM, DCS1800
US AWS
US GSM
N/A, ref. Bd.19
EMEA
GSM900
Japan 1700 Mhz
Extended AWS
Application Note AN364, Rev. 1.0
5 / 27
2014-12-18
5 Page 
2 BGA7L1N6 Overview
BGA7L1N6
Single Band LTE LNA B8
BGA7L1N6 Overview
2.1 Features
• Insertion power gain: 13.0 dB
• Out-of-band input 3rd order intercepts point: +5 dBm
• Input 1 dB compression point: +2 dBm
• Low noise figure: 0.60 dB
• Low current consumption: 4.9 mA
• Operating frequencies: 728 - 960 MHz
• Supply voltage: 1.5 V to 3.6 V
• Digital on/off switch (1V logic high level)
• Ultra small TSNP-6-2 leadless package (footprint:
0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
Figure 2
BGA7L1N6 in TSNP-6-2
2.2 Description
The BGA7L1N6 is a front-end low noise amplifier for LTE which covers a wide frequency
range from 728 MHz to 960 MHz. The LNA provides 13.0 dB gain and 0.60 dB noise figure at
a current consumption of 4.9 mA in the application configuration described in Chapter 3. The
BGA7L1N6 is based upon Infineon Technologies‘B7HF Silicon Germanium technology. It
operates from 1.5 V to 3.6 V supply voltage.
Application Note AN364, Rev. 1.0
11 / 27
2014-12-18
11 Page | ||
| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet BGA7L1N6.PDF ] | |
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