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PDF 9NK60Z Data sheet ( Hoja de datos )
| Número de pieza | 9NK60Z | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™
Power MOSFET in D²PAK, TO-220 and TO-220FP packages
Datasheet − production data
Features
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
VDS RDS(on) max ID PTOT
600
V
125 W
0.95 Ω 7 A
30 W
■ Extremely high dv/dt capability
■ Improved ESD capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
TAB
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Applications
■ Switching applications
Figure 1. Internal schematic diagram
, TAB
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
SC15010
Table 1. Device summary
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
Marking
B9NK60Z
P9NK60Z
P9NK60ZFP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 8799 Rev 3
1/19
www.st.com
19
1 page  
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage VGS= 0
ID = 1 mA
600
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 600 V,
VDS = 600 V, TC = 125 °C
1
50
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±10
VGS(th) Gate threshold voltage
VDS= VGS, ID = 100 µA
3 3.75 4.5
RDS(on)
Static drain-source on-
resistance
VGS= 10 V, ID= 3.5 A
0.85 0.95
V
µA
µA
µA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15 V, ID = 3.5 A
- 5.3
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
1110
- 135
30
pF
pF
pF
Coss
(2)
eq
Equivalent output
capacitance
VGS=0, VDS =0 V to 480 V
- 72
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480 V, ID = 7 A
VGS =10 V
(see Figure 18)
38 53 nC
-7
nC
21 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 8799 Rev 3
5/19
5 Page 
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Doc ID 8799 Rev 3
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet 9NK60Z.PDF ] | |
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