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What is MJE13003-E?

This electronic component, produced by the manufacturer "Unisonic Technologies", performs the same function as "NPN SILICON TRANSISTOR".


MJE13003-E Datasheet PDF - Unisonic Technologies

Part Number MJE13003-E
Description NPN SILICON TRANSISTOR
Manufacturers Unisonic Technologies 
Logo Unisonic Technologies Logo 


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UNISONIC TECHNOLOGIES CO., LTD
MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The UTC MJE13003-E designed for use in high–volatge,
high speed,power switching in inductive circuit, It is particularly
suited for 115 and 220V switchmode applications such as
switching regulator’s,inverters, DC-DC converter, Motor
control, Solenoid/Relay drivers and deflection circuits.
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K
MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B
MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K
MJE13003L-E-x-T92-A-B MJE13003G-E-x-T92-A-B
MJE13003L-E-x-T92-A-K MJE13003G-E-x-T92-A-K
Package
TO-126S
TO-92
TO-92
TO-92
TO-92
Pin Assignment
123
BCE
BCE
BCE
ECB
ECB
Packing
Bulk
Tape Box
Bulk
Tape Box
Bulk
MARKING INFORMATION
PACKAGE
TO-126S
TO-92
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MARKING
1 of 8
QW-R223-009.D

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MJE13003-E equivalent
MJE13003-E
SWITCHING TIMES NOTE
NPN EPITAXIAL SILICON TRANSISTOR
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each wave form to determine the total switching time, For this reason, the following new terms have
been defined.
tSV=Voltage Storage Time, 90% IB1 to 10% Vclamp
tRV=Voltage Rise Time, 10-90% Vclamp
tFI=Current Fall Time, 90-10% IC
tTI=Current Tail, 10-2% IC
tC=Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is shown in Figure 1 to aid in the visual identity of
these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN-222:
PSWT=1/2 VccIc (tc)f
In general, trv + tfitc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistor, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications
which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
2
1
0.7 tR
0.5
Collector Current, IC (A)
Vcc=125V
Ic/IB=5
TJ=25°C
0.3
0.2
0.1
0.07
0.05
td @ VBE(off)=5V
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5
0.7
1
0
Fig 2. Turn-On Time
20
Collector Current, IC (A)
10
7
5
tS
Vcc=125V
Ic/IB=5
TJ=25°C
3
2
1
0.7
0.5
0.3 tR
0.2
0.1
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
Fig 3. Turn-Off Time
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R223-009.D


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