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PDF BUK7907-55ATE Data sheet ( Hoja de datos )
| Número de pieza | BUK7907-55ATE | |
| Descripción | N-channel TrenchPLUS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7907-55ATE
N-channel TrenchPLUS standard level FET
Rev. 03 — 9 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been
designed and qualified to the appropriate AEC standard for use in automotive critical
applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Q101 compliant
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
1.3 Applications
12 V and 24 V high power motor
drives
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Protected drive for lamps
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
ID
Ptot
Tj
RDSon
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; see Figure 2; see Figure 3
Tmb = 25 °C; see Figure 1
VGS = 10 V; ID = 50 A; Tj = 175 °C; see Figure 7;
see Figure 8
VGS = 10 V; ID = 50 A; Tj = 25 °C; see Figure 7;
see Figure 8
SF(TSD) temperature sense diode IF = 250 µA; Tj > -55 °C; Tj < 175 °C
temperature coefficient
VF(TSD) temperature sense diode IF = 250 µA; Tj = 25 °C
forward voltage
Min
-
[1] -
-
-55
-
-
-1.4
648
Typ Max Unit
- 55 V
- 140 A
- 272 W
- 175 °C
- 14 mΩ
5.8 7
mΩ
-1.54 -1.68 mV/K
658 668 mV
[1] Current is limited by power dissipation chip rating.
1 page  
NXP Semiconductors
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-a)
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
thermal resistance from vertical in still air
junction to ambient
thermal resistance from see Figure 4
junction to mounting
base
Min Typ Max Unit
- 60 - K/W
- - 0.55 K/W
03ni29
1
Zth(j-mb)
(K/W)
10−1
10−2
δ = 0.5
0.2
0.1
0.05
0.02
single shot
P δ = tp
T
10−3
10−6
10−5
10−4
10−3
10−2
10−1
tp
T
1
tp (s)
t
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7907-55ATE_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
BUK7907-55ATE
N-channel TrenchPLUS standard level FET
03ni72
100
IS
(A)
80
60
40
175 °C
20
Tj = 25 °C
0
0.0 0.2 0.4 0.6 0.8 1.0
VSD (V)
Fig 17. Reverse diode current as a function of reverse diode voltage; typical values
BUK7907-55ATE_3
Product data sheet
Rev. 03 — 9 February 2009
© NXP B.V. 2009. All rights reserved.
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