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What is GTVA261701FA?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "Thermally-Enhanced High Power RF GaN HEMT".


GTVA261701FA Datasheet PDF - Infineon

Part Number GTVA261701FA
Description Thermally-Enhanced High Power RF GaN HEMT
Manufacturers Infineon 
Logo Infineon Logo 


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GTVA261701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT
170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
Input Matched
Typical Pulsed CW performance, 2690 MHz, 48 V, single side
- Output power at P3dB = 170 W
- Efficiency = 72%
- Gain = 16 dB
GaN HEMT technology
High power density
High efficiency
RoHS-compliant
Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
GTVA261701FA
Package H-37265J-2
Target RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 48 V, IDQ = 200 mA, POUT = 50 W avg, ƒ1 = 2620 MHz, ƒ2 = 2690 MHz, channel bandwidth = 3.84 MHz, peak/average
= 10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
— 18 — dB
hD
— 47
%
ACPR — –29 — dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-05-29


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
GTVA261701FAThe function is Thermally-Enhanced High Power RF GaN HEMT. InfineonInfineon

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