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PDF GTVA220701FA Data sheet ( Hoja de datos )
| Número de pieza | GTVA220701FA | |
| Descripción | Thermally-Enhanced High Power RF GaN HEMT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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GTVA220701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT
70 W, 50 V, 1805 – 2170 MHz
Description
The GTVA220701FA is a 70-watt (P3dB) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• Input matched
• Typical Pulsed CW performance, 2170 MHz, 48 V
- Output power at P3dB = 70 W
- Efficiency = 70%
- Gain = 20 dB
• Capable of handling 10:1 VSWR @48 V, 70 W (CW) output
power
• GaN HEMT technology
• High power density
• High efficiency
• RoHS-compliant
Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
GTVA220701FA
Package H-37265J-2
Target RF Characteristics
Single-carrier LTE Specifications (tested in Infineon test fixture)
VDD = 48 V, IDQ = 200 mA, POUT = 6.3 W avg, ƒ1 = 2170 MHz, 3GPP signal, channel bandwidth = 20 MHz, peak/average =
9.6 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
hD
ACPR
Min
—
—
—
Typ
21.3
26
–29.6
Max
—
—
—
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-08-18
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet GTVA220701FA.PDF ] | |
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