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PDF NX3L1G384 Data sheet ( Hoja de datos )
| Número de pieza | NX3L1G384 | |
| Descripción | Low-ohmic single-pole single-throw analog switch | |
| Fabricantes | NXP Semiconductors | |
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NX3L1G384
Low-ohmic single-pole single-throw analog switch
Rev. 6 — 3 July 2012
Product data sheet
1. General description
The NX3L1G384 is a low-ohmic single-pole single-throw analog switch. It has two
input/output terminals (Y and Z) and an active LOW enable input pin (E). When E is HIGH,
the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times. The NX3L1G384 allows signals with amplitude up to VCC to be transmitted
from Y to Z; or from Z to Y. Its low ON resistance (0.5 ) and flatness (0.13 ) ensures
minimal attenuation and distortion of transmitted signals.
2. Features and benefits
Wide supply voltage range from 1.4 V to 4.3 V
Very low ON resistance (peak):
1.6 (typical) at VCC = 1.4 V
1.0 (typical) at VCC = 1.65 V
0.55 (typical) at VCC = 2.3 V
0.50 (typical) at VCC = 2.7 V
0.50 (typical) at VCC = 4.3 V
High noise immunity
ESD protection:
HBM JESD22-A114F Class 3A exceeds 7500 V
MM JESD22-A115-A exceeds 200 V
CDM AEC-Q100-011 revision B exceeds 1000 V
IEC61000-4-2 contact discharge exceeds 4000 V for switch ports
CMOS low-power consumption
Latch-up performance exceeds 100 mA per JESD 78 Class II Level A
Direct interface with TTL levels at 3.0 V
Control input accepts voltages above supply voltage
High current handling capability (350 mA continuous current under 3.3 V supply)
Specified from 40 C to +85 C and from 40 C to +125 C
3. Applications
Cell phone
PDA
Portable media player
1 page  
NXP Semiconductors
NX3L1G384
Low-ohmic single-pole single-throw analog switch
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions
Tamb = 25 C
Min Typ Max
CI
CS(OFF)
CS(ON)
input
capacitance
OFF-state
capacitance
ON-state
capacitance
- 1.0 -
- 35 -
- 110 -
Tamb = 40 C to +125 C Unit
Min Max Max
(85 C) (125 C)
- - - pF
- - - pF
- - - pF
11.1 Test circuits
VCC
VIH E
Z
VI
Y IS
GND
VO
VIL E
IS Z
VI
VCC
Y
GND
VO
001aag479
Fig 5.
VI = 0.3 V or VCC 0.3 V; VO = VCC 0.3 V or 0.3 V.
Test circuit for measuring OFF-state leakage
current
001aag480
Fig 6.
VI = 0.3 V or VCC 0.3 V; VO = open circuit.
Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
Symbol Parameter Conditions
Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit
Min Typ[1] Max
Min
Max
RON(peak)
ON resistance
(peak)
VI = GND to VCC;
ISW = 100 mA; see Figure 7
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
- 1.6 3.7
- 1.0 1.6
- 0.55 0.8
-
-
-
4.1
1.7
0.9
VCC = 2.7 V
VCC = 4.3 V
- 0.5 0.75
- 0.5 0.75
-
-
0.9
0.9
NX3L1G384
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 3 July 2012
© NXP B.V. 2012. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
NX3L1G384
Low-ohmic single-pole single-throw analog switch
VCC
0.5VCC
VIL E
RL
Y/Z Z/Y
fi dB
001aai603
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads 3 dB.
Fig 18. Test circuit for measuring the frequency response when channel is in ON-state
0.5VCC
RL VIH E
Y/Z
VCC
0.5VCC
RL
Z/Y
fi dB
Adjust fi voltage to obtain 0 dBm level at input.
Fig 19. Test circuit for measuring isolation (OFF-state)
001aai604
a. Test circuit
VCC
E
G VI
Y/Z
RL
Z/Y
RL
0.5VCC
0.5VCC
CL V VO
001aai605
logic
input (E)
off
on
off
VO Vct
001aai606
b. Input and output pulse definitions
Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch
NX3L1G384
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 3 July 2012
© NXP B.V. 2012. All rights reserved.
11 of 18
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