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Número de pieza | UT3N01Z | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | Unisonic Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UT3N01Z (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD
UT3N01Z
N-CHANNEL SILICON MOSFET
GENERAL-PURPOSE
SWITCHING DEVICE
APPLICATIONS
DESCRIPTION
The UT3N01Z uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device’s general purpose is for switching device
applications.
FEATURES
* RDS(ON) < 2.0Ω @ VGS=4V, ID=80mA
RDS(ON) < 3.0Ω @ VGS=2.5V, ID=40mA
RDS(ON) < 12.8Ω @ VGS=1.5V, ID=10mA
* Ultra low gate charge ( typical 5 nC )
* Low reverse transfer capacitance ( CRSS = typical 7.5 pF )
* Fast switching capability
* Enhanced ESD capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Note:
UT3N01ZG-AE2-R
UT3N01ZG-AL3-R
UT3N01ZG-AN3-R
UT3N01ZG-AL6-R
Pin Assignment: G: Gate D: Drain
Package
SOT-23-3
SOT-323
SOT-523
SOT-363
S: Source
Pin Assignment
123456
SGD - - -
SGD - - -
SGD - - -
S1 G1 D2 S2 G2 D1
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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1 page UT3N01Z
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
120 Breakdown Voltage
0
100
0
80
0
60
0
40
0
20
0
0
0 10 20 30 40 50 60
Drain-Source Breakdown Voltage,
BVDSS(V)
Drain-Source On-State
Resistance Characteristics
100
80
VGS=4V
60 ID=80mA
40 VGS=2.5V
ID=40mA
20
VGS=1.5V
00
ID=10mA
50 100 150
200
Drain to Source Voltage, VDS (mV)
Drain Current vs. Drain to Source
Voltage
1
0.5
0.2
R DS(ON) LIMIT
1ms
0.1
0.05
0.02
VGS=2.7V
Single Pulse
SOT-23
0.01
0.5 1
5 10 15 25 35
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Drain Current vs.
Gate Threshold Voltage
300
250
200
150
100
50
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Gate Threshold Voltage, VTH (V)
Drain Current vs.
Source to Drain Voltage
160
140
120
100
80
60
40
20
0
0
0.2 0.4 0.6
0.8 1.0
Source to Drain Voltage, VSD (V)
Power vs. Single Pulse Time
5
4
3
2
1
0
0.001 0.01 0.1 1 10 100 300
Single Pulse Time (sec)
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet UT3N01Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
UT3N01Z | N-CHANNEL MOSFET | Unisonic Technologies |
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