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PDF UF640-P Data sheet ( Hoja de datos )
| Número de pieza | UF640-P | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
UF640-P
18A, 200V, 0.18OHM,
N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power MOSFET field effect
transistor have low conduction power loss, high input
impedance, and high switching speed, Linear Transfer
Characteristics, so can be use in a variety of power conversion
applications.
The UF640-P suitable for resonant and PWM converter
topologies.
FEATURES
* RDS(ON) =0.18Ω@ VGS=10V, ID=10A
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
1
Power MOSFET
TO-220
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
UF640L-TA3-T
UF640G-TA3-T
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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UF640-P
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet UF640-P.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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