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PDF UK3919 Data sheet ( Hoja de datos )

Número de pieza UK3919
Descripción SWITCHING N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! UK3919 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
UK3919
SWITCHING N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
This UK3919 N-Channel Logic Level MOSFET is
produced using UTC Semiconductor advanced Power
Trench process which has been tailored to make the
on-state resistance minimum and yet maintain low gate
charge for superior switching performance especially.
The UK3919 is well suited for where low in-line power
loss is needed in a very small outline surface mount
package, such as low voltage and battery powered
applications.
„ FEATURES
* RDS(ON) = 5.6m@VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified
„ SYMBOL
2.Drain
*Pb-free plating product number:UK3919L
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UK3919-TN3-R
UK3919L-TN3-R
UK3919-TN3-T
UK3919L-TN3-T
Package
TO-252
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tape Reel
Tube
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
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UK3919 pdf
UK3919
„ TYPICAL CHARACTERISTICS(Cont.)
Source to Drain Diode Forward Voltage
1000
VGS=10V
100
10 0V
1
0.1
0.01
0
Pulsed
0.5 1 1.5
Source to Drain Voltage,VF(S-D) (V)
Single Avalanche Current vs. Inductive
100 Load
IAS=27A
10
EAS=73mJ
VDD=12.5V
RG=25Ω
VGS=20 0V
1 Starting TCH=25
0.01 0.1
1
Inductive Load,L (mH)
10
Power MOSFET
1000
Reverse Recovery Time VS.Diode
Forward Current
di/dt=100A/μs
VGS=0V
100
10
1
1 10 100
Diode Forward Current,IF (A)
Single Avalanche Energy Derating Factor
120
VDD=12.5V
100
RG=25Ω
VGS=20 0V
IAS27A
80
60
40
20
0
25 50 75 100 125 150
Starting Channel Temperature,Starting,TCH ()
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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