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Datasheet 1N6384 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6384 | TVS Diode, Rectifier www.vishay.com
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
Case Style 1.5KE
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
VBR (uni-directional)
6.0 V to 21.2 V
VBR (bi-directional)
9.2 V to 21.2 V
PPPM
1500 W
PD 6.5 W
IFSM
|  Vishay | tvs-diode |
| 2 | 1N6384 | Diode, Rectifier, TVS Type MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389
GLASS PASSIVATED JU |  MDE | tvs-diode |
| 3 | 1N6384 | Diode, 1500W, TVS, Rectifier 1500W Transient Voltage Suppressor ICTE-5 - ICTE-45C
1500W Transient Voltage Suppressor
Features
• Glass passivated junction • 1500W Peak Pulse Power capability with a 10/1000 μs waveform • Very Low clamping voltage • Stand-off Voltage Range 5V to 45V • Unidirectional and Bidirectional |  TAITRON | tvs-diode |
| 4 | 1N6384 | Transient Voltage Suppressor 1N6373-1N6389
High-reliability discrete products and engineering services since 1977
Transient Voltage Suppressor
1500 Watt
FEATURES:
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number Available Non-RoHS (standard) or |  Digitron Semiconductors | tvs-diode |
| 5 | 1N6384 | 1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION
1N6373 thru 1N6389, e3 or MPTE-5 thru MPTE-45C, e3
1500 WATT LOW CLAMPING FACTOR TRANSIENT VOLTAGE SUPPRESSOR
WWW.Microsemi .COM
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389 are JEDEC registered selections for both unidirection |  Microsemi | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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