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PDF MTBA0N10KJ3 Data sheet ( Hoja de datos )

Número de pieza MTBA0N10KJ3
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Cystech Electonics 
Logotipo Cystech Electonics Logotipo



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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTBA0N10KJ3
Spec. No. : C139J3
Issued Date : 2015.09.30
Revised Date :
Page No. : 1/ 9
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD Protected Gate
Pb-free lead plating and halogen-free package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=8.8A
RDS(ON)@VGS=4.5V, ID=8.8A
RDS(ON)@VGS=4V, ID=8.8A
100V
13.4A
3.7A
82 mΩ(typ)
89 mΩ(typ)
92 mΩ(typ)
Symbol
MTBA0N10KJ3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTBA0N10KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA0N10KJ3
CYStek Product Specification

1 page




MTBA0N10KJ3 pdf
CYStech Electronics Corp.
Spec. No. : C139J3
Issued Date : 2015.09.30
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
1.2
Ciss
ID=1mA
1
100 C oss
0.8
10
0.1
10
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
1
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=80V
8 VDS=50V
6
0.1 VDS=10V
Ta=25°C
Pulsed
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
10 Limited
1
100μs
1ms
10ms
100ms
1s
DC
0.1 TC=25°C, Tj=150°C
VGS=10V, RθJC=3.8°C/W
Single Pulse
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
4
2 ID=13.4A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
15
12
9
6
3 Tj(max)=150°C, VGS=10V,
RθJC=3.8°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTBA0N10KJ3
CYStek Product Specification

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