DataSheet.es    


PDF PXAC182908FV Data sheet ( Hoja de datos )

Número de pieza PXAC182908FV
Descripción Thermally-Enhanced High Power RF LDMOS FET
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de PXAC182908FV (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! PXAC182908FV Hoja de datos, Descripción, Manual

PXAC182908FV
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182908FV is a 240-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1805 to 1880 MHz frequency band. Features
include dual-path design, input and output matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC182908FV
Package H-37275G-6/2
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24 60
Efficiency
20 40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF
4
-20
-40
0
25
pxac182908fc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
Broadband internal input and output matching
Asymmetrical Doherty design
- Main : P1dB = 120 W Typ
- Peak : P1dB = 220 W Typ
Typical Pulsed CW performance, 1842.5 MHz, 28 V,
combined outputs
- Output power at P1dB = 240 W
- Efficiency = 52.6%
- Gain = 14.5 dB
Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 600 mA, VGSPEAK = 0.70 V, POUT = 70 W avg, ƒ1 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Adjancent Channel Power Ratio
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Min
14
49.5
Typ
15
51
–27.5
Max
–25
Unit
dB
%
dBc
Rev. 02.1, 2015-07-29

1 page




PXAC182908FV pdf
Reference Circuit , 1805 – 1880 MHz
VGSMAIN
RO4350, .020
R805
C803
S3
C802
S2 R802
(61)
C801
R801
S1
R803
R102
C102 C101
R101
C105
C103
C104
RF
IN
R105
U1
C110
C106
C109
VGSPEAK
R104
C107
C108
R103
C112 C111
S4
R804
PXAC182908FV_IN_02A
Reference circuit assembly diagram (not to scale)
PXAC182908FV
RO4350, .020
C204
C203
C208 C209 C210
C202
C201
C205
C220
C206 C207
C229
C221
(194)
VDD
C230
C224
C222
C223
C228
RF
OUT
C211
C212
C213
C214
C225
C218
C216 C217
C219
C226
C227 C215
C231
PXAC182908FV_OUT_02_D
C223
pxac182908fv_CD_07-06-2015
VDD
Data Sheet
5 of 9
Rev. 02.1, 2015-07-29

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet PXAC182908FV.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
PXAC182908FVThermally-Enhanced High Power RF LDMOS FETInfineon
Infineon

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar