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Número de pieza | PMBD914 | |
Descripción | Single high-speed switching diode | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PMBD914
Single high-speed switching diode
Rev. 06 — 11 February 2009
Product data sheet
1. Product profile
1.1 General description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in a
small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number[1]
PMBD914
PMBD914/DG
Package
NXP
SOT23
JEDEC
TO-236AB
[1] /DG: halogen-free
1.2 Features
I High switching speed: trr ≤ 4 ns
I Low leakage current
I Repetitive peak reverse voltage:
VRRM ≤ 100 V
I Low capacitance: Cd ≤ 1.5 pF
I Reverse voltage: VR ≤ 100 V
I Small SMD plastic package
1.3 Applications
I High-speed switching
1.4 Quick reference data
Table 2.
Symbol
IF
VR
trr
Quick reference data
Parameter
forward current
reverse voltage
reverse recovery time
Conditions
Min Typ Max Unit
[1] - - 215 mA
- - 100 V
[2] - - 4 ns
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
1 page NXP Semiconductors
PMBD914
Single high-speed switching diode
250
IF
(mA)
200
msa562
150
100
50
0
0 50 100 150 200
Tamb (°C)
FR4 PCB, standard footprint
Fig 5. Forward current as a function of ambient temperature; derating curve
8. Test information
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
mga881
VR
tr
10 %
tp
90 %
input signal
(1) IR = 1 mA
Fig 6. Reverse recovery time test circuit and waveforms
I 1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
90 %
10 %
tr tp
input signal
Fig 7. Forward recovery voltage test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
V
VFR
tt
output signal
mga882
PMBD914_6
Product data sheet
Rev. 06 — 11 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet PMBD914.PDF ] |
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