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What is HSMS-282P?

This electronic component, produced by the manufacturer "AVAGO", performs the same function as "Surface Mount RF Schottky Barrier Diodes".


HSMS-282P Datasheet PDF - AVAGO

Part Number HSMS-282P
Description Surface Mount RF Schottky Barrier Diodes
Manufacturers AVAGO 
Logo AVAGO Logo 


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HSMS-282x
Surface Mount RF Schottky ­Barrier Diodes
Data Sheet
Description/Applications
These Schottky diodes are specifically designed for both
analog and digital applications. This series offers a wide
range of specifica­tions and package con­figura­tions to
give the d­ esigner wide flexib­ ility. Typical applications of
these Schottky diodes are mixing, detecting, switching,
sampling, clamping, and wave shaping. The HSMS‑282x
series of diodes is the best all-around choice for most
applications, featuring low series resistance, low forward
voltage at all current levels and good RF characteristics.
Note that Avago’s manufacturing techniques assure that
dice found in pairs and quads are taken from adjacent
sites on the wafer, assuring the highest degree of match.
Package Lead Code Identification,
SOT-23/SOT-143 (Top View)
SINGLE
3
SERIES
3
COMMON
ANODE
3
COMMON
CATHODE
3
Features
Low Turn-On Voltage (As Low as 0.34 V at 1 mA)
Low FIT (Failure in Time) Rate*
Six-sigma Quality Level
Single, Dual and Quad Versions
Unique Configurations in Surface Mount SOT-363 Package
– increase flexibility
– save board space
– reduce cost
HSMS-282K Grounded Center Leads Provide up to 10
dB Higher Isolation
Matched Diodes for Consistent Performance
Better Thermal Conductivity for Higher Power Dissipation
Lead-free Option Available
* For more information see the Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
654
UNCONNECTED
TRIO
654
1 #0 2
UNCONNECTED
PAIR
34
1 #2 2
RING
QUAD
34
1 #3 2
BRIDGE
QUAD
34
1 #4 2
CROSS-OVER
QUAD
34
123
K
COMMON
CATHODE QUAD
654
123
L
COMMON
ANODE QUAD
654
1 #5 2
1 #7 2
1 #8 2
Package Lead Code Identification, SOT-323
(Top View)
SINGLE
SERIES
1 #9 2
B
COMMON
ANODE
C
COMMON
CATHODE
1 2M 3
BRIDGE
QUAD
654
1 2P 3
1 2N 3
RING
QUAD
654
1 2R 3
EF

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HSMS-282P equivalent
Applications Information
Product Selection
Avago’s family of surface mount Schottky diodes provide
unique solutions to many design problems. Each is opti‑
mized for certain applications.
The first step in choosing the right product is to select the
diode type. All of the products in the HSMS‑282x fami‑
ly use the same diode chip – they differ only in package
configuration. The same is true of the HSMS-280x, -281x,
285x, -286x and -270x families. Each family has a different
set of characteristics, which can be compared most easily
by consulting the SPICE parameters given on each data
sheet.
The HSMS‑282x family has been optimized for use in RF
applications, such as
DC biased small signal detectors to 1.5 GHz.
Biased or unbiased large signal detectors (AGC or
power monitors) to 4 GHz.
Mixers and frequency multipliers to 6 GHz.
The other feature of the HSMS‑282x family is its unit‑to‑unit
and lot‑to‑lot consistency. The silicon chip used in this se‑
ries has been designed to use the fewest possible process‑
ing steps to minimize variations in diode characteristics.
Statistical data on the consistency of this product, in terms
of SPICE parameters, is available from Avago.
For those applications requiring very high breakdown
voltage, use the HSMS‑280x family of diodes. Turn to the
HSMS‑281x when you need very low flicker noise. The
HSMS‑285x is a family of zero bias detector diodes for small
signal applications. For high frequency detector or mixer
applications, use the HSMS‑286x family. The HSMS‑270x
is a series of specialty diodes for ultra high speed clipping
and clamping in digital circuits.
Schottky Barrier Diode Characteristics
Stripped of its package, a Schottky barrier diode chip con‑
sists of a metal-semiconductor barrier formed by deposi‑
tion of a metal layer on a semiconductor. The most com‑
mon of several different types, the passivated diode, is
shown in Figure 10, along with its equivalent circuit.
RoSf
is the parasitic series resistance of the diode, the sum
the bondwire and leadframe resistance, the resistance
of the
is lost
bulk layer of silicon,
as heat—it does not
ceotcn.tRriFbuetneetrogythceourepclteidfieidntoouRt‑S
put of
diode,
tchoendtrioodlleed. CbJ iys
parasitic junction
the thick-ness of
capacit­ ance of the
the epitaxial layer
and
tion
the diameter of
resistance of the
tdhioedSec,haoftutnkyctcioonntoafctth. eRjtoistathl ceujrurennct‑
flowing through it.
R j =8.–3–3I–X––S1–0+––I –-b5–n–T– = R V – R s
≈0–.0–2–6–– at 25 °C
I S+Ib
where
n =
iId=eaI lSit(ye fa0V.c0-t2IRo6rS (s1e)e table of SPICE parameters)
T = temperature in °K
IIRtSbhv==e= V -essIuaxctmtuuerrrovaneftaijolulynnaccptuiporrlneienadtnbd(siaseeserciteuasrbrrleeensotisfitnSaPnaImcCeEp, tsphaerasmloepteerosf)
IpSiicsoaafmunpcstfioorn
of diode barrier height, and can
high barrier diodes to as much
range from
as 5 µA for
very low barrier diodes.
TThheeHceuRigrrhje=tn8ot.f-3vt3hI–oeX–ltSSa1–cg0+heo–I t-b5ctknhyTaBraa=crtRreieVrr­istRicsof a Schottky barrier
deqioudaetioatnr:o0Io–.0Sm2–+6–tI–ebmapt e2r5a°tCure is described by the following
I = I S (e –0V.0-2IR6S – 1)
On a semi-log plot (as shown in the Avago catalog) the
current graph will be a straight line with inverse slope 2.3
X 0.026 = 0.060 volts per
in a curve that droops at
cycle
high
c(uunrrteilntth)e. AelflfeSccht oofttRkSyisdsioedene
curves have the same slope, but not necessarily the same
value of current for a given voltage. This is deter­mined
by the
height
saturation current,
of the diode.
IS,
and
is
related
to
the
barrier
Through the choice of p-type or n‑type silicon, and the
selection of metal, one can tailor the characteristics of a
Schottky diode. Barrier height will be altered, and at the
sbzaeamrroreiebrtiiamhseeaipgChpJtlaicndadi­toiodRnSesws)(ialwlrbeitehrechahilgiaznhegdveaodlnu. Iepns-tgoyefpneISe,srsialuilc,itovaenbr.ylSeulofcowhr
diodes suffer from higher values of RS than do the n‑type.
METAL
RS
PASSIVATION
PASSIVATION
N-TYPE OR P-TYPE EPI LAYER
SCHOTTKY JUNCTION
N-TYPE OR P-TYPE SILICON SUBSTRATE
Cj
Rj
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
Figure 10. Schottky Diode Chip.
EQUIVALENT
CIRCUIT
5


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Part Details

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