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What is ATF-541M4?

This electronic component, produced by the manufacturer "AVAGO", performs the same function as "Low Noise Enhancement Mode Pseudomorphic HEMT".


ATF-541M4 Datasheet PDF - AVAGO

Part Number ATF-541M4
Description Low Noise Enhancement Mode Pseudomorphic HEMT
Manufacturers AVAGO 
Logo AVAGO Logo 


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ATF-541M4
Low Noise Enhancement Mode ­Pseudomorphic HEMT
in a ­Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ­ ATF­‑541M4 is a high linearity, low
noise, single supply E‑PHEMT housed in a miniature lead‑
less package.
The ATF-541M4’s small size and low profile makes it ideal
for the design of hybrid module and other space-con‑
straint devices.
The device can be used in applications such as TMA and
front end LNA for Cellular/PCS and WCDMA base stations,
LNA and driver amplifiers for Wireless Data and 802.11b
WLAN.
In addition, the device’s superior RF performance at higher
frequency makes it an ideal candidate for high frequency
applications such as WLL, 802.11a WLAN, 5–6 GHz UNII
and HIPERLAN applications.
MiniPak 1.4 mm x 1.2 mm Package
Rx
Pin Connections and Package Marking
Source
Pin 3
Gate
Pin 2
Rx
Drain
Pin 4
Source
Pin 1
Features
• High linearity performance
• Single Supply Enhancement Mode Technology[1]
• Very low noise figure
• Excellent uniformity in product specifications
• 800 micron gate width
• Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-Reel packaging option available
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 35.8 dBm output 3rd order intercept
• 21.4 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier and Driver Amplifier for Cellular/
PCS and WCDMA Base Stations
• LNA and Driver Amplifier for WLAN, WLL/RLL and
MMDS applications
• General purpose discrete E-PHEMT for ultra low noise
applications in the 450 MHz to 10 GHz frequency range
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Note:
Top View. Package marking provides orientation, product identifica‑
tion and date code.
“R” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.

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ATF-541M4 equivalent
ATF-541M4 Typical Performance Curves, continued
30 45
25 C
25
-40 C
85 C
40
35
20
30
15
25
10
20
25 C
-40 C
5
85 C
15
0
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 12. Gain vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
10
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 13. OIP3 vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
2.0
25 C
-40 C
1.5 85 C
1.0
0.5
0
01
23
45
67
FREQUENCY (GHz)
Figure 14. NF vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
23
25 C
22
-40 C
85 C
21
20
19
18
17
01 2 3 4 5 67
FREQUENCY (GHz)
Figure 15. P1dB vs. Freq. and Temperature
Tuned for Max OIP3 and Min NF at
Vds = 3V, Ids = 60 mA[1].
ATF-541M4 Output Reflection Coefficient Parameters Tuned
for Maximum Output IP3[1]; VDS = 3V, IDS = 60 mA
Gamma[2]
Gamma[2]
OIP3
P1dB
Freq Out_Mag. Out_Mag.
(GHz)
(Mag)
(Degrees)
(dBm)
(dBm)
0.9 0.006
23
2.0 0.314 -167
3.9 0.321
134
5.8 0.027
89
35.04
35.82
36.60
37.62
19.47
21.36
20.37
19.38
Notes:
1. Input tuned for minimum NF and the output tuned for maximum
OIP3 using an InterContinental Microwave (ICM) test fixture, double
stub tuners and bias tees.
2. Gamma out is the reflection coefficient of the matching circuit pre‑
sented to the output of the device.



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Featured Datasheets

Part NumberDescriptionMFRS
ATF-541M4The function is Low Noise Enhancement Mode Pseudomorphic HEMT. AgilentAgilent
ATF-541M4The function is Low Noise Enhancement Mode Pseudomorphic HEMT. AVAGOAVAGO

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