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PDF ATF-511P8 Data sheet ( Hoja de datos )
| Número de pieza | ATF-511P8 | |
| Descripción | High Linearity Enhancement Mode Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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ATF-511P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-511P8 is a single-voltage high
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
1Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Note:
Package marking provides orientation and identification:
“1P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
41.7 dBm output IP3
30 dBm output power at 1 dB gain compression
1.4 dB noise figure
14.8 dB gain
12.1 dB LFOM[4]
69% PAE
Applications
Front-end LNA Q2 and Q3 driver or pre-driver amplifier
for Cellular/PCS and WCDMA wireless infrastructure
Driver amplifier for WLAN, WLL/RLL and MMDS
applications
General purpose discrete E-pHEMT for other high
linearity applications
1 page  
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 200 mA
50
45
40
35
30
25
20
4.5 V
4V
3V
15
10
50 150 250 350 450
IDS (mA)
Figure 8. OIP3 vs. IDS and VDS at 2 GHz.
550
50
45
40
35
30
25
4.5 V
20 4 V
3V
15
10
50 150 250 350 450 550
IDS (mA)
Figure 9. OIP3 vs. IDS and VDS at 900 MHz.
35
30
25
20
4.5 V
4V
15 3 V
10
50 150 250 350 450 550
IDS (mA)
Figure 11. P1dB vs. IDS and VDS at 900 MHz.
17
16
15
14
13
12 4.5 V
4V
3V
11
10
50 150 250 350 450
IDS (mA)
Figure 12. Gain vs. IDS and VDS at 2 GHz.
550
80
70
60
50
40
30
4.5 V
20 4 V
3V
10
0
50 150 250 350 450
IDS (mA)
Figure 14. PAE vs. IDS and VDS at 2 GHz.
550
80
70
60
50
40
30
4.5 V
20 4 V
3V
10
0
50 150 250 350 450 550
IDS (mA)
Figure 15. PAE vs. IDS and VDS at 900 MHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level
may increase or decrease depending on amount of RF drive.
35
30
25
20
4.5 V
15 4 V
3V
10
50 150 250 350 450 550
IDS (mA)
Figure 10. P1dB vs. IDS and VDS at 2 GHz.
20
19
18
17
16
15 4.5 V
4V
3V
14
13
50 150 250 350 450 550
IDS (mA)
Figure 13. Gain vs. IDS and VDS at 900 MHz.
50
45
40
35
30 -40 C
25 C
85 C
25
20
0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
Figure 16. OIP3 vs. Temp and Freq.
4
5
5 Page 
ATF-511P8 Typical Scattering Parameters, VDS = 4V, IDS = 200 mA
Freq. S11
GHz Mag. Ang.
0.1 0.94 -133.7
0.2 0.93 -156.9
0.3 0.93 -165.9
0.4 0.94 -170.9
0.5 0.93 -174.5
0.6 0.93 -175.8
0.7 0.93 -178.2
0.8 0.92 179.7
0.9 0.92 178.0
1 0.93 176.3
1.5 0.92 169.6
2 0.93 164.4
2.5 0.92 159.6
3 0.92 154.2
4 0.92 144.9
5 0.91 135.5
6 0.92 126.6
7 0.91 117.1
8 0.91 108.2
9 0.90 99.1
10 0.92 89.2
11 0.90 79.6
12 0.91 70.9
13 0.90 62.2
14 0.94 53.8
15 0.87 45.0
16 0.89 37.7
17 0.89 30.5
18 0.88 25.4
S21
dB Mag.
30.85 34.87
25.31 18.41
21.89 12.43
19.48 9.42
17.53 7.52
16.77 6.89
15.53 5.97
14.28 5.17
13.21 4.57
12.34 4.13
8.63 2.70
6.12 2.02
4.07 1.59
2.30 1.30
-0.31 0.96
-2.55 0.74
-4.30 0.60
-5.64 0.52
-6.81 0.45
-7.13 0.44
-7.76 0.40
-8.39 0.38
-8.92 0.35
-9.42 0.33
-9.84 0.32
-10.51 0.29
-10.74 0.29
-10.03 0.31
-11.77 0.25
Ang.
111.4
99.5
94.2
90.9
88.8
86.0
84.2
82.5
80.5
78.6
71.0
63.5
57.0
50.3
37.4
25.4
15.1
6.50
-2.8
-13.7
-21.2
-30.0
-42.9
-48.9
-60.1
-68.5
-72.4
-85.1
-91.8
S12
dB Mag.
-37.28
-36.61
-36.19
-35.98
-35.84
-34.69
-34.42
-34.11
-33.77
-33.66
-32.21
-30.69
-29.46
-28.47
-26.48
-25.14
-24.15
-23.20
-22.06
-21.10
-20.40
-19.67
-19.28
-19.11
-18.86
-18.58
-18.59
-17.88
-17.72
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.02
0.02
0.02
0.03
0.03
0.04
0.05
0.06
0.06
0.07
0.08
0.09
0.10
0.10
0.11
0.11
0.11
0.11
0.12
0.13
Ang.
28.2
20.4
20.2
20.4
23.0
23.5
25.0
27.1
29.2
29.6
34.5
38.0
39.4
37.7
33.8
28.4
23.4
18.3
12.3
5.2
-2.7
-11.0
-19.9
-27.2
-33.1
-38.4
-43.7
-48.3
-59.0
S22
Mag. Ang.
0.73 -162.5
0.76 -172.6
0.78 -176.3
0.78 -179.5
0.78 178.5
0.76 177.3
0.75 175.5
0.76 173.9
0.76 172.5
0.76 171.4
0.76 165.3
0.76 159.2
0.76 154.1
0.75 148.6
0.73 137.1
0.69 127.3
0.64 119.4
0.62 114.5
0.62 108.5
0.62 100.8
0.64 90.4
0.65 79.3
0.66 67.0
0.67 57.1
0.68 48.7
0.7 40.0
0.71 36.3
0.73 28.8
0.74 19.5
MSG/MAG
dB
33.96
30.89
28.90
27.70
26.73
25.83
24.98
24.13
23.60
22.95
20.34
17.32
14.52
12.34
9.75
6.74
5.17
3.27
2.03
1.60
1.40
0.26
0.15
-0.69
-1.20
-1.56
-1.97
-2.50
-2.82
40
30
MSG
20
10
0
S21
-10
MAG
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
-20
0 5 10 15 20
FREQUENCY (GHz)
Figure 35. MSG/MAG & |S21|2(dB) @ 4V, 200 mA.
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet ATF-511P8.PDF ] | |
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