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What is AT-31033?

This electronic component, produced by the manufacturer "AVAGO", performs the same function as "High Performance NPN Silicon Bipolar Transistor".


AT-31033 Datasheet PDF - AVAGO

Part Number AT-31033
Description High Performance NPN Silicon Bipolar Transistor
Manufacturers AVAGO 
Logo AVAGO Logo 


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AT-31011, AT-31033
Low Current, High Performance NPN 
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for op-
eration at low voltages, making them ideal for use in bat-
tery powered applications in wireless markets. The AT-
31033 uses the 3 lead SOT‑23, while the AT-31011 places
the same die in the higher performance 4 lead SOT‑143.
Both packages are industry standards compatible with
high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a mul­tiplicity
of tasks. The 10 emitter finger interdigitated geometry
yields an extremely fast transistor with low operating
currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscil­la­
tor, or active mixer. Applica­tions include cellular and PCS
handsets as well as Industrial-Scientific-Medical systems.
Typical amplifier designs at 900 MHz yield 1.3 dB noise
figures with 11 dB or more associated gain at a 2.7 V, 1
mA bias. Moderate output power capability (+9 dBm
P1dB) coupled with an excellent noise figure yields high
dynamic range for a microcurrent device. High gain ca-
pability at 1 V, 1 mA makes these devices a good fit for 900
MHz pager appli­ca­tions.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz fmax
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
Characterized for End-Of-Life Battery Use (2.7 V)
SOT-143 SMT Plastic Package
Tape-And-Reel Packaging Option Available
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
310x
BASE EMITTER
SOT-143 (AT-31011)
COLLECTOR
310x
BASE EMITTER
SOT-23 (AT-31033)
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.

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AT-31033 equivalent
AT-31011 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq.     
GHz Mag
S11 Ang dB
MSa21g A ng dB
MSa12g A ng    Mag S22 Ang
0.1
0.95 -8
11.12 3.60 174
-37.91 0.01 85
0.999 -3
0.5
0.92 -34
10.58 3.38 150
-24.67 0.06 68
0.94 -15
0.9
0.81 -60
9.74 3.07 130
-20.67 0.09 53
0.89 -25
1.0
0.79 -66
9.33 2.93 125
-20.03 0.10 50
0.88 -27
1.5
0.66 -94
8.02 2.52 104
-18.34 0.12 36
0.80 -36
1.8
0.60 -110
7.18 2.28 93
-17.95 0.13 30
0.76 -40
2.0
0.57 -119
6.76 2.18 87
-17.73 0.13 27
0.74 -42
2.4
0.51 -139
5.56 1.90 74
-17.69 0.13 22
0.71 -46
3.0
0.45 -167
4.22 1.63 57
-17.95 0.13 19
0.67 -51
4.0
0.45 153
2.30 1.30 36
-18.33 0.12 22
0.64 -62
5.0
0.49 120
0.73 1.09 17
-17.33 0.14 32
0.62 -72
AT-31011 Typical Noise Parameters,
30
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
FGrHe zq FmdiBn[ 1]       Mag   ΓOPT Ang
Rn
0.5[2]
0.5
0.90
13
0.85
0.9
0.6
0.85
29
0.73
1.8
1.1
0.68
67
0.46
2.4
1.6
0.55
98
0.28
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable
in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
20
MSG
10
S21
MAG
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 17. AT-31011 Gains vs. Frequency at Vce = 1 V,
Ic = 1 mA.
AT-31033 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω AT-31011 fig 17
Freq.     
GHz Mag
S11 Ang dB
MSa21g A ng dB
MSa12g A ng    Mag S22 Ang
0.1
0.94 -7
11.16 3.61 173
-35.95 0.02
85
0.999 -3
0.5
0.87 -34
10.37 3.30 144
-22.84 0.07
68
0.92 -17
0.9
0.70 -58
9.17 2.87 121
-19.06 0.11
56
0.85 -27
1.0
0.66 -64
8.69 2.72 115
-18.49 0.12
53
0.83 -29
1.5
0.46 -90
7.11 2.27 92
-16.94 0.14
45
0.74 -37
1.8
0.36 -106
6.16 2.03 81
-16.40 0.15
43
0.70 -40
2.0
0.31 -117
5.66 1.92 74
-16.06 0.16
42
0.68 -42
2.4
0.22 -143
4.48 1.67 62
-15.50 0.17
42
0.66 -45
3.0
0.16 166
3.19 1.44 46
-14.34 0.19
44
0.63 -50
4.0
0.23 101
1.39 1.17 25
-11.85 0.26
46
0.60 -62
5.0
0.33 67
0.05 1.01
9
-9.11 0.35 41
0.56 -77
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
FGrHe zq FmdiBn[ 1]       Mag   ΓOPT Ang
0.5[2]
0.5
0.90
12
0.9
0.6
0.82
28
1.8
1.1
0.57
68
2.4
1.6
0.41
100
Rn
0.70
0.60
0.38
0.22
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable
in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.

30
20
MSG
10
MAG
S21 MSG
00 1 2 3 4 5
FREQUENCY (GHz)
Figure 18. AT-31033 Gains vs. Frequency at Vce = 1 V,
Ic = 1 mA.
AT-31011 fig 18


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Featured Datasheets

Part NumberDescriptionMFRS
AT-31033The function is Low Current/ High Performance NPN Silicon Bipolar Transistor. Agilent(Hewlett-Packard)Agilent(Hewlett-Packard)
AT-31033The function is High Performance NPN Silicon Bipolar Transistor. AVAGOAVAGO
AT-31033-BLKThe function is Low Current/ High Performance NPN Silicon Bipolar Transistor. Agilent(Hewlett-Packard)Agilent(Hewlett-Packard)

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