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PDF AT-31011 Data sheet ( Hoja de datos )
| Número de pieza | AT-31011 | |
| Descripción | High Performance NPN Silicon Bipolar Transistor | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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AT-31011, AT-31033
Low Current, High Performance NPN
Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-31011 and AT-31033 are high performance
NPN bipolar transistors that have been optimized for op-
eration at low voltages, making them ideal for use in bat-
tery powered applications in wireless markets. The AT-
31033 uses the 3 lead SOT‑23, while the AT-31011 places
the same die in the higher performance 4 lead SOT‑143.
Both packages are industry standards compatible with
high volume surface mount assembly techniques.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of these transistors yields extremely high
performance products that can perform a multiplicity
of tasks. The 10 emitter finger interdigitated geometry
yields an extremely fast transistor with low operating
currents and reasonable impedances.
Optimized performance at 2.7 V makes these devices
ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery
operated systems as an LNA, gain stage, buffer, oscilla
tor, or active mixer. Applications include cellular and PCS
handsets as well as Industrial-Scientific-Medical systems.
Typical amplifier designs at 900 MHz yield 1.3 dB noise
figures with 11 dB or more associated gain at a 2.7 V, 1
mA bias. Moderate output power capability (+9 dBm
P1dB) coupled with an excellent noise figure yields high
dynamic range for a microcurrent device. High gain ca-
pability at 1 V, 1 mA makes these devices a good fit for 900
MHz pager applications.
The AT-3 series bipolar transistors are fabricated using
an optimized version of Avago’s 10 GHz fT, 30 GHz fmax
Self-Aligned-Transistor (SAT) process. The die are nitride
passivated for surface protection. Excellent device uni-
formity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and
gold metalization in the fabrication of these devices.
Features
• High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
• 900 MHz Performance:
AT-31011: 0.9 dB NF, 13 dB GA
AT-31033: 0.9 dB NF, 11 dB GA
• Characterized for End-Of-Life Battery Use (2.7 V)
• SOT-143 SMT Plastic Package
• Tape-And-Reel Packaging Option Available
• Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
310x
BASE EMITTER
SOT-143 (AT-31011)
COLLECTOR
310x
BASE EMITTER
SOT-23 (AT-31033)
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
1 page  
AT-31011 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω
Freq.
GHz Mag
S11 Ang dB
MSa21g A ng dB
MSa12g A ng Mag S22 Ang
0.1
0.95 -8
11.12 3.60 174
-37.91 0.01 85
0.999 -3
0.5
0.92 -34
10.58 3.38 150
-24.67 0.06 68
0.94 -15
0.9
0.81 -60
9.74 3.07 130
-20.67 0.09 53
0.89 -25
1.0
0.79 -66
9.33 2.93 125
-20.03 0.10 50
0.88 -27
1.5
0.66 -94
8.02 2.52 104
-18.34 0.12 36
0.80 -36
1.8
0.60 -110
7.18 2.28 93
-17.95 0.13 30
0.76 -40
2.0
0.57 -119
6.76 2.18 87
-17.73 0.13 27
0.74 -42
2.4
0.51 -139
5.56 1.90 74
-17.69 0.13 22
0.71 -46
3.0
0.45 -167
4.22 1.63 57
-17.95 0.13 19
0.67 -51
4.0
0.45 153
2.30 1.30 36
-18.33 0.12 22
0.64 -62
5.0
0.49 120
0.73 1.09 17
-17.33 0.14 32
0.62 -72
AT-31011 Typical Noise Parameters,
30
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
FGrHe zq FmdiBn[ 1] M ag ΓOPT Ang
Rn
0.5[2]
0.5
0.90
13
0.85
0.9
0.6
0.85
29
0.73
1.8
1.1
0.68
67
0.46
2.4
1.6
0.55
98
0.28
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable
in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
20
MSG
10
S21
MAG
00 1 2 3 4
FREQUENCY (GHz)
5
Figure 17. AT-31011 Gains vs. Frequency at Vce = 1 V,
Ic = 1 mA.
AT-31033 Typical Scattering Parameters, VCE = 1 V, IC = 1 mA, Common Emitter, ZO = 50 Ω AT-31011 fig 17
Freq.
GHz Mag
S11 Ang dB
MSa21g A ng dB
MSa12g A ng Mag S22 Ang
0.1
0.94 -7
11.16 3.61 173
-35.95 0.02
85
0.999 -3
0.5
0.87 -34
10.37 3.30 144
-22.84 0.07
68
0.92 -17
0.9
0.70 -58
9.17 2.87 121
-19.06 0.11
56
0.85 -27
1.0
0.66 -64
8.69 2.72 115
-18.49 0.12
53
0.83 -29
1.5
0.46 -90
7.11 2.27 92
-16.94 0.14
45
0.74 -37
1.8
0.36 -106
6.16 2.03 81
-16.40 0.15
43
0.70 -40
2.0
0.31 -117
5.66 1.92 74
-16.06 0.16
42
0.68 -42
2.4
0.22 -143
4.48 1.67 62
-15.50 0.17
42
0.66 -45
3.0
0.16 166
3.19 1.44 46
-14.34 0.19
44
0.63 -50
4.0
0.23 101
1.39 1.17 25
-11.85 0.26
46
0.60 -62
5.0
0.33 67
0.05 1.01
9
-9.11 0.35 41
0.56 -77
AT-31033 Typical Noise Parameters,
Common Emitter, ZO = 50 Ω, 1 V, IC = 1 mA
FGrHe zq FmdiBn[ 1] M ag ΓOPT Ang
0.5[2]
0.5
0.90
12
0.9
0.6
0.82
28
1.8
1.1
0.57
68
2.4
1.6
0.41
100
Rn
0.70
0.60
0.38
0.22
Notes:
1. Matching constraints may make Fmin values associated with high |ΓOPT| values unachievable
in physical circuits. See Figure 2 for expected performance.
2. 0.5 GHz noise parameter values are extrapolated, not measured.
30
20
MSG
10
MAG
S21 MSG
00 1 2 3 4 5
FREQUENCY (GHz)
Figure 18. AT-31033 Gains vs. Frequency at Vce = 1 V,
Ic = 1 mA.
AT-31011 fig 18
5 Page | ||
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