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What is IPD60R1K0CE?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as "MOSFET ( Transistor )".


IPD60R1K0CE Datasheet PDF - Infineon Technologies

Part Number IPD60R1K0CE
Description MOSFET ( Transistor )
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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IPD60R1K0CE,IPU60R1K0CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
DPAK
tab
2
1
3
IPAK
tab
12 3
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1000
m
Id. 6.8 A
Qg.typ
13
nC
ID,pulse
12
A
Eoss@400V
1.3
µJ
Type/OrderingCode
IPD60R1K0CE
IPU60R1K0CE
Package
PG-TO 252
PG-TO 251
Marking
60S1K0CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31

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IPD60R1K0CE equivalent
600VCoolMOSªCEPowerTransistor
IPD60R1K0CE,IPU60R1K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
220 -
1.5 -
12 -
Unit Note/TestCondition
V VGS=0V,IF=1.9A,Tj=25°C
ns
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
µC
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
A
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
Final Data Sheet
5
2016-03-31


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPD60R1K0CE electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IPD60R1K0CEThe function is MOSFET ( Transistor ). Infineon TechnologiesInfineon Technologies

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