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PDF IKQ100N60T Data sheet ( Hoja de datos )
| Número de pieza | IKQ100N60T | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IKQ100N60T (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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IGBT
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryanti-parallelEmitterControlleddiode
IKQ100N60T
600Vlowlossswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
1 page  
TRENCHSTOPTMseries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.20mA
VGE=15.0V,IC=100.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=100.0A
Tvj=25°C
Tvj=175°C
IC=1.20mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=100.0A
IKQ100N60T
min.
Value
typ.
max. Unit
600 -
-V
- 1.50 2.00 V
- 1.90 -
- 1.65 2.05 V
- 1.60 -
4.1 4.9 5.7 V
- - 40.0 µA
- 2500.0 -
- - 100 nA
- 63.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=480V,IC=100.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 6230 -
- 360 - pF
- 175 -
- 610.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=100.0A,
VGE=0.0/15.0V,
RG(on)=3.6Ω,RG(off)=3.6Ω,
Lσ=63nH,Cσ=31pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 30 - ns
- 38 - ns
- 290 - ns
- 31 - ns
- 3.10 - mJ
- 2.50 - mJ
- 5.60 - mJ
5 Rev.2.2,2014-11-18
5 Page 
TRENCHSTOPTMseries
IKQ100N60T
1E+4
Cies
Coes
Cres
1600
1400
1200
1000
1000
800
600
100
400
200
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0
12 13 14 15 16 17 18 19 20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,Tj≤150°C)
14
12
0.1
10
D=0.5
8
0.2
0.1
0.05
0.02
6
0.01
0.01 single pulse
4
2
i: 1 2 3 4 5 6
ri[K/W]: 7.9E-3 0.02027372 0.02064642 0.03120728 0.09632085 0.03448753
τi[s]: 2.0E-5 2.2E-4
1.3E-3
0.01240146 0.1069267 0.527093
0 0.001
10 11 12 13 14 15
1E-6 1E-5 1E-4 0.001 0.01 0.1
VGE,GATE-EMITTERVOLTAGE[V]
tp,PULSEWIDTH[s]
1
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE=400V,startatTj=25°C,Tjmax≤150°C)
Figure 20. IGBTtransientthermalimpedanceasa
functionofpulsewidthfordifferentduty
cyclesD
(D=tp/T)
11 Rev.2.2,2014-11-18
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IKQ100N60T.PDF ] | |
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