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PDF 10T Data sheet ( Hoja de datos )
| Número de pieza | 10T | |
| Descripción | TRIACs | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
10T Series RRooHHSS
TRIACs, 10A
Snubberless and Standard
MAIN FEATURES
SYMBOL
IT(RMS)
VDRM/VRRM
IGT(Q1)
VALUE
10
600 to 1000
25 to 50
UNIT
A
V
mA
DESCRIPTION
The 10T triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
The snubberless version are specially recommended
for use on inductive loads, thanks to their high
commutation performances.
By using an internal ceramic pad, the 10T series provides
voltage insulated tab (rated at 2500VRMS) complying
with UL standards (File ref. :E320098)
A2
A1
A2
G
12 3
TO-220AB (non-Insulated)
(10TxxA)
TO-220AB (lnsulated)
(10TxxAI)
2(A2)
3(G)
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
TEST CONDITIONS
IT(RMS)
TO-220AB
TO-220AB insulated
Tc = 105ºC
Tc = 95ºC
F =50 Hz
ITSM
F =60 Hz
I2t tp = 10 ms
t = 20 ms
t = 16.7 ms
dI/dt F =100 Hz
Tj =125ºC
VALUE
10
100
105
50
50
IGM
PG(AV)
Tstg
Tj
Tp =20 µs
Tj =125ºC
Tj =125ºC
4
1
- 40 to + 150
- 40 to + 125
UNIT
A
A
A2s
A/µs
A
W
ºC
www.nellsemi.com
Page 1 of 5
1 page  
SEMICONDUCTOR
10T Series RRooHHSS
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values)
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C ]
2.5
2.0
lGT
1.5
1.0 IH&IL
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
BC
1.4
1.2
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0 10.0
BW/CW
100.0
Fig.9 Relative variation of critical rate of decrease of
main current versus junction temperature
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
0 25 50 75
100 125
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
2(A2)
3(G)
1(A1)
RoHS
www.nellsemi.com
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 10T.PDF ] | |
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