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PDF 10N70-Q Data sheet ( Hoja de datos )
| Número de pieza | 10N70-Q | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 10N70-Q (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
10N70-Q
Preliminary
10A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 10N70-Q is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
1
1
FEATURES
* RDS(ON) =1.2Ω@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
TO-220F
TO-220F1
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N70L-TF1-T
10N70G-TF1-T
10N70L-TF3-T
10N70G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-967. A
1 page  
10N70-Q
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
VDS
RD
10V
tp
D.U.T.
VDD
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-967. A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 10N70-Q.PDF ] | |
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