GFP8N60 Datasheet PDF - ETC
Part Number | GFP8N60 | |
Description | N-Channel enhancement mode power field effect Transistors | |
Manufacturers | ETC | |
Logo | ||
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General Description(概述)
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS
technology.
GFP8N60是增强型N沟道功率场效应管,采用平面条形DMOS
工艺生产制造。
This advanced technology has been especially tailored
to minimize on - state resistance , provide superior
switching performance,and Withstand high energy pulse
in the avalanche and commutaion mode .These devices
are well suited for high efficiency switch mode power
supply,electronic lamp ballasts
based on half bridge topology.
GFP8N60具有低导通电阻、优越的开关特性以及抗雪崩击穿
能力,适合用于高效开关电源、电子镇流器等。
TO-220
1.Gate 2.Drain 3.Source
Absolute Maximum ratings(极限参数,除非另有规定,T=25 ℃ )
Characteristics(参数)
漏源反向击穿电压
连续漏极电流
栅源电压
雪崩能量
耗散功率
储存温度
热阻(结到壳)
正向压降
Symbol(符号)
BVDSS
ID
VGS
EAS
PD
TSTG
RθJC
VSD
Value(额定值)
600
7.5
+ 30
230
147
-55 ~150
0.85
1.4
Units(单位)
V
A
V
mJ
W
℃
℃/ W
V
Characteristics
参数名称
开启电压
栅源漏电流
漏源漏电流
导通电阻
跨导
输入电容
输出电容
传输电容
导通延迟时间
上升时间
下降延迟时间
下降时间
栅极存储电荷
栅源电荷
栅漏电荷
Symbol
(符号)
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Min.
Typ.
(最小值) (典型值)
2.0 -
--
--
- 1.0
- 8.7
- 965
- 105
- 12
- 16.5
- 60.5
- 81
- 64.5
- 28
- 4.5
- 12
Page : 1/5
Max.
(最大值)
4.0
+100
10
1.2
-
1255
135
16
45
130
170
140
36
-
-
Units
(单位)
V
nA
uA
Ω
S
Test Conditions
(测试条件)
VDS= VGS,ID=250uA
VGS= +30V, VDS= 0V
VDS=600V ,VGS= 0V
VGS= 10V,ID=3.75A
VDS= 40V, ID=3.75A
pF VGS= 0V, VDS= 25V
F=1.0MHz
ns
VDD= 300V, ID= 7.5A
RG=25 Ω
nC VDS= 480V, VGS= 10V
ID=7.5A
|
|
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
ISD
L
Driver
Same Type
as DUT
VDD
VGS .dv/dt controlled by RG
.ISD controlled by pulse period
VGS
(Driver)
ISD
(DUT)
VDS
(DUT)
10V
IFM Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GFP8N60 electronic component. |
Information | Total 5 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GFP8N60.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
GFP8N60 | The function is N-Channel enhancement mode power field effect Transistors. ETC | |
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