|
|
Número de pieza | 1SS196 | |
Descripción | SILICON EPITAXIAL PLANAR DIODE | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS196 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
1SS196
Ultra High-Speed Switching Applications
Unit: mm
z Small package: SC-59
z Low forward voltage: VF (3) = 0.9 V (typ.)
z Fast reverse recovery time: trr = 1.6 ns (typ.)
z Small total capacitance: CT = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
85 V
80 V
300 mA
100 mA
2A
150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-59
TOSHIBA
1-3G1A
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1 mA
― IF = 10 mA
― IF = 100 mA
― VR = 30 V
― VR = 80 V
― VR = 0, f = 1 MHz
― IF = 10 mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
― ― 0.1
μA
― ― 0.5
― 0.9 3.0 pF
― 1.6 4.0 ns
Marking
Start of commercial production
1982-05
1 2014-03-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS196.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS190 | SILICON EPITAXIAL PLANAR DIODE | Toshiba Semiconductor |
1SS190 | Switching Diodes | LGE |
1SS190 | SWITCHING DIODE | RECTRON |
1SS190 | SWITCHING DIODE | JCET |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |