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Número de pieza | BCX70GLT1 | |
Descripción | General Purpose Transistors | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! BCX70GLT1
General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
45 Vdc
45 Vdc
5.0 Vdc
200 mAdc
Characteristic
Total Device Dissipation FR− 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction to
Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance, Junction to
Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 2.0 mAdc, IE= 0)
Emitter −Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc)
(VCE = 32 Vdc, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
3
1
2
CASE 318 −08, STYLE 6
SOT−23 (TO −236)
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
Min
V(BR)CEO
V(BR)EBO
ICES
IEBO
45
5.0
—
—
—
Max Unit
— Vdc
— Vdc
20 nAdc
20 mAdc
20 nAdc
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
BCX70GLT1/D
1 page BCX70GLT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
200 25°C
100
80
60
40
0.004 0.006 0.01
0.02 0.03 0.05 0.07 0.1
−55 °C
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
VCE = 1.0 V
VCE = 10 V
5.0 7.0 10
20 30
50 70 100
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA 10 mA
50 mA 100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
Figure 9. Collector Saturation Region
20
100
TA = 25°C
PULSE WIDTH = 300 μs
80 DUTY CYCLE ≤ 2.0%
60
40
20
IB = 500 μA
400 μA
300 μA
200 μA
100 μA
0
0 5.0 10 15 20 25 30 35 40
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Collector Characteristics
1.4
TJ = 25°C
1.2
1.0
0.8 VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
0
0.1
VCE(sat) @ IC/IB = 10
0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
50 100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
0
25°C to 125°C
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
qVB for VBE
− 55°C to 25°C
−2.4
0.1
0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50
Figure 12. Temperature Coefficients
100
http://onsemi.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BCX70GLT1.PDF ] |
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