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Datasheet ZXM62P03G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ZXM62P03G | 30V P-CHANNEL ENHANCEMENT MODE MOSFET 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03G
SUMMARY V(BR)DSS = -30V: RDS(on) = 0.15 : ID = -4.0A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high e |  Zetex Semiconductors | mosfet |
ZXM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ZXM240128A6 | Display Module 惠州市中显电子科技有限公司图形点阵模块使用手册
惠州市中显电子科技有限公司
产 品 说 明 书
ZXM240128A6
联系地址：惠州市江北区云山花园路六号宏业工业大楼 联系电话：0752-2840863 0752-2897256 传真号码：0752-2897257 公司网址：  Huizhou City display | | |
| 2 | ZXM41N0F | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
ZXM41N0F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
• BVDSS = 100V • Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source Zetex Semiconductors mosfet | | |
| 3 | ZXM41N10F | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET ZXM41N10F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
FEATURES
• BVDSS = 100V • Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-source voltage Drain-gate voltage Continuous drain current at T amb =25°C Pulsed drain current Gate-source voltage Power dissip Zetex Semiconductors mosfet | | |
| 4 | ZXM61N02 | 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.18⍀; ID=1.7A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high eff Zetex Semiconductors mosfet | | |
| 5 | ZXM61N02F | 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=20V; RDS(ON)=0.18⍀; ID=1.7A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high eff Zetex Semiconductors mosfet | | |
| 6 | ZXM61N03F | 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N03F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=30V; RDS(ON)=0.22⍀; ID=1.4A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high eff Zetex Semiconductors mosfet | | |
| 7 | ZXM61P02 | 20V P-CHANNEL ENHANCEMENT MODE MOSFET ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60⍀; ID=-0.9A
DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high e Zetex Semiconductors mosfet | |
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