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PDF MMBT2222AL Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222AL | |
| Descripción | General Purpose Transistors | |
| Fabricantes | ON Semiconductor | |
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MMBT2222L, MMBT2222AL,
SMMBT2222AL
General Purpose Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBT2222L
MMBT2222AL, SMMBT2222AL
VCEO
Value
30
40
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MMBT2222L
60
MMBT2222AL, SMMBT2222AL
75
Emitter −Base Voltage
VEBO
Vdc
MMBT2222L
5.0
MMBT2222AL, SMMBT2222AL
6.0
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
IC 600 mAdc
ICM
1100
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 11
1
Publication Order Number:
MMBT2222LT1/D
1 page  
MMBT2222L, MMBT2222AL, SMMBT2222AL
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Current−Gain Bandwidth Product
1
IC/IB = 10
150°C
0.1
−55°C
25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 1 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Voltage vs. Collector
Current
1.3
1.2 IC/IB = 10
1.1
1.0
0.9 −55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
+0.5
0 RqVC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0 RqVB for VBE
- 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
www.onsemi.com
5
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| PDF Descargar | [ Datasheet MMBT2222AL.PDF ] | |
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