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PDF MMS9012 Data sheet ( Hoja de datos )
| Número de pieza | MMS9012 | |
| Descripción | PNP Silicon Plastic-Encapsulate Transistor | |
| Fabricantes | MCC | |
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Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMS9012
Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.3Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
• Marking Code: J3Y
PNP Silicon
Plastic-Encapsulate
Transistor
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
40 --- Vdc
25 --- Vdc
5.0 --- Vdc
--- 0.1 uAdc
--- 0.1 uAdc
--- 0.1 uAdc
hFE(1)
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
hFE(2)
DCCurrent Gain
(IC=500mAdc, VCE=1.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
VEB Base- Emitter Voltage
(IE=100mAdc)
SMALL-SIGNAL CHARACTERISTICS
120 350 ---
40 --- ---
--- 0.6 Vdc
--- 1.2 Vdc
--- 1.4 Vdc
fT Transistor Frequency
150 --- MHz
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
L
120-200
H
200-350
SOT-23
A
D
CB
FE
G HJ
K
DIMENSIONS
INCHES
DIM MIN
MAX
A .110 .120
B .083 .098
C .047 .055
D .035 .041
E .070 .081
F .018 .024
G
.0005
.0039
H .035 .044
J .003 .007
K .015 .020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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