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PDF SDA555xFL Data sheet ( Hoja de datos )
| Número de pieza | SDA555xFL | |
| Descripción | TVText Pro Flash Programming Manual | |
| Fabricantes | Micronas Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SDA555xFL (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Micronas
APPLICATION NOTE IC
SDA 555xFL
TVText Pro
Flash Programming
Manual
Edition Dec. 19, 2001
6251-556-2AN
MICRONAS
1 page  
APPLICATION NOTE IC
SDA 555xFL
3. Flash Programing
3.1. Flash Read
During the flash programing mode, to read data, the
address bits must be inserted as discussed in
Section 2.2. Ddir must be driven low; read signal RD
activation then starts the flash read cycle. No addi-
tional commands are necessary to perform this opera-
tion.
In the normal mode, the microcontroller internally gen-
erates the read signal to fetch instructions from the
flash ROM.
3.2. Flash Write
During the flash programing mode, to write data, the
address bits must be inserted as discussed in
Section 2.2. Ddir must be driven high; write signal WR
activation then starts the flash write cycle internally.
Writing here refers to writing a command or command
sequence. These commands are written to the internal
programming registers which initiate the action (pro-
gram/erase) based on the command.
3.3. Command Interface
Commands are written to the specific addresses
(which do not occupy the flash ROM address space)
with a specific data sequence. For specific commands,
please refer to the appropriate flash specification.
3.3.1. Erase Flash
Erase flash command sequence erases the complete
flash memory. It is a six cycle operation requiring six
successive write operations to the command registers.
The command sequence consists of two unlock write
cycles, followed by a set up command. Two additional
unlock write cycles are then followed to complete the
flash erase command. Once the complete command
sequence is written to the command register, internal
circuitry starts the erase operation and does not
require any further external support.
While the erase flash command is in progress, any fur-
ther commands written to the chip are ignored.
When the erase operation is completed, it is indicated
by raising the D7 to 1. After the erase command is fin-
ished, the flash ROM is automatically brought back
into read access mode.
As a result of erase flash, complete memory is initial-
ized, each bit holds logic level 1.
3.3.2. Program Flash
The program command sequence programs one data
byte into the specified location of the the Flash ROM. It
is a four cycle operation requiring four successive
writes to the command register. The command
sequence consists of two unlock write cycles, followed
by program setup command, and data write cycle.
Once the complete command sequence is written to
the command register, internal circuitry starts the pro-
gram operation and does not require any further exter-
nal support.
While the program flash command is in progress, any
further commands written to the chip are ignored.
Please note that a data bit "0" cannot be programmed
back to "1". Only an erase algorithm can set the data
bit to "1". Attempting to do so may result in a device
hang up.
Micronas
3
5 Page 
APPLICATION NOTE IC
SDA 555xFL
Micronas
9
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SDA555xFL.PDF ] | |
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