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What is SiR812DP?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "N-Channel 30 V (D-S) MOSFET".


SiR812DP Datasheet PDF - Vishay

Part Number SiR812DP
Description N-Channel 30 V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 


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www.vishay.com
SiR812DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) MAX.
0.00145 at VGS = 10 V
0.00200 at VGS = 4.5 V
ID (A) a
60
60
PowerPAK® SO-8 Single
D
D8
D7
D6
5
Qg (TYP.)
109 nC
6.15 mm
1
Top View
5.15 mm
1
2S
3S
4S
G
Bottom View
Ordering Information:
SiR812DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Motor control
• Industrial
• Load switch
• ORing
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
30
± 20
60 a
60 a
48.9 b, c
39 b, c
400
60 a
5.6 b, c
25
31.2
104
66.6
6.25 b, c
4 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
15
0.9
20
°C/W
1.2
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
S15-1543-Rev. B, 29-Jun-15
1
Document Number: 63551
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SiR812DP equivalent
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiR812DP
Vishay Siliconix
220
176
132
88
Limited by Package
44
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating a
125 3.0
100 2.4
75 1.8
50 1.2
25 0.6
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1543-Rev. B, 29-Jun-15
5
Document Number: 63551
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SiR812DP electronic component.


Information Total 13 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
SiR812DPThe function is N-Channel 30 V (D-S) MOSFET. VishayVishay

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